DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max T = +25C Low Input Capacitance C Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m V = -10V -14A GS -60V Halogen and Antimony Free. Green Device (Note 3) 140m V = -4.5V -12A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Case: TO252 (DPAK) performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions e3 Solderable per MIL-STD-202, Method 208 Analog Switch Weight: 0.33 grams (approximate) D TO252 D GS Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Compliance Case Packaging DMP6180SK3-13 Standard TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6180SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -14 C Continuous Drain Current (Note 6) V = -10V I A GS D State -10 T = +100C C Maximum Body Diode Forward Current (Note 6) 4.1 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 25 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.7 A Total Power Dissipation (Note 5) P W D 1.0 T = +70C A Steady state 76 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 33 2.7 T = +25C A Total Power Dissipation (Note 6) P W D 1.5 T = +70C A Steady state 50 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 24 40 T = +25C C Total Power Dissipation (Note 6) P W D 16 T = +100C C Thermal Resistance, Junction to Case (Note 6) Steady state R 3.1 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.2 -2.7 V V = V , I = -250A GS(th) DS GS D 60 110 V = -10V, I = -12A GS D Static Drain-Source On-Resistance m R DS (ON) 80 140 V = -4.5V, I =-8A GS D Forward Transfer Admittance Y 15 S V = -5V, I = -12A fs DS D Diode Forward Voltage -0.7 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 984.7 C iss Output Capacitance 58 pF C V = -30V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 45.5 C rss 12.9 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.1 Total Gate Charge (V = -4.5V) Q GS g 17.1 Total Gate Charge (V = -10V) Q GS g nC V = -30V, I = -12A DS D 3.2 Gate-Source Charge Q gs 3.9 Gate-Drain Charge Q gd 5.9 Turn-On Delay Time t D(on) Turn-On Rise Time 21.2 t V = -10V, V = -30V, R = 3 , r GS DS GEN ns Turn-Off Delay Time 30.9 R = 2.5 t L D(off) Turn-Off Fall Time 39.1 t f Body Diode Reverse Recovery Time 19.9 ns t I = -12A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 1.7 nC I = -12A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing 2 of 6 July 2013 DMP6180SK3 Diodes Incorporated www.diodes.com Document number: DS36172 Rev. 3 - 2 NEW PRODUCT