DMP6250SE-13 Diodes Incorporated

DMP6250SE-13 electronic component of Diodes Incorporated
DMP6250SE-13 Diodes Incorporated
DMP6250SE-13 MOSFETs
DMP6250SE-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMP6250SE-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP6250SE-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMP6250SE-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: mosfet p trench 60v 2.1a 3v @ 250ua 250 m @ 1a,10v sot-223 rohs
Datasheet: DMP6250SE-13 Datasheet (PDF)
Price (USD)
1: USD 1.2375 ea
Line Total: USD 1.24 
Availability - 6779
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 1.2375
10$ 0.84
100$ 0.5049
500$ 0.3916
1000$ 0.3542
2500$ 0.3047
5000$ 0.2948

Availability 2307
Ship by Wed. 06 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9262
10$ 0.7272
30$ 0.6416
100$ 0.3603
500$ 0.3286
1000$ 0.3081


Availability 6779
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2375
10$ 0.84
100$ 0.5049
500$ 0.3916
1000$ 0.3542
2500$ 0.3047
5000$ 0.2948


Availability 2425
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 1.0498
5000$ 1.0416
10000$ 1.0335
15000$ 1.0254
20000$ 1.017
50000$ 1.0088


Availability 29100
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3124

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP6250SE-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP6250SE-13 and other electronic components in the MOSFETs category and beyond.

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DMP6250SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low gate drive I D V R (BR)DSS DS(on) T = +25C Low input capacitance A Fast switching speed -2.1A 250m V = -10V GS -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -1.9A 300m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for Case: SOT223 high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See diagram below DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Power Management Functions e3 Solderable per MIL-STD-202, Method 208 Uninterrupted Power Supply Weight: 0.112 grams (approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP6250SE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6250SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage V -60 V DSS Gate-Source voltage (Note 5) V 20 V GS T = +25C A -2.1 I A D T = +70C A -1.7 Continuous Drain current (Note 6) V = -10V GS T = +25C C -6.1 A I D T = +70C C -4.9 Maximum Body Diode Continuous Current -1.8 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -11 A DM Single Pulsed Avalanche Current (Note 7) L = 0.1mH I -12 A AS Single Pulsed Avalanche Energy (Note 7) L = 0.1mH E 8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.8 A Total Power Dissipation (Note 6) P W D T = +70C 1.1 A Thermal Resistance, Junction to Ambient (Note 6) R 69 C/W JA 14 Total Power Dissipation (Note 6) T = +25C P W C D Thermal Resistance, Junction to Case (Note 6) R 8.7 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1 A V = -60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(th) DS GS D 250 V = -10V, I = -1.0A GS D Static Drain-Source On-Resistance R m DS (ON) 300 V = -4.5V, I = -0.5A GS D Diode Forward Voltage -1.2 V V V = 0V, I = -2.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 551 pF C iss V = -30V, V = 0V DS GS Output Capacitance 25.7 pF C oss f= 1MHz Reverse Transfer Capacitance 19.1 C pF rss 12.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 4.8 Total Gate Charge (VGS = -4.5V) Q nC g 9.7 Total Gate Charge (VGS = -10V) Q nC g V = -30V, I = -2A DS D 1.5 Gate-Source Charge Q nC gs 1.6 Gate-Drain Charge Q nC gd Turn-On Delay Time 6.3 ns t D(on) Turn-On Rise Time 10.3 ns t V = -30V, V = -10V, r DS GS Turn-Off Delay Time 91.4 ns R = 50 , I = -1A t G D D(off) Turn-Off Fall Time 39.8 ns t f Reverse recovery time t 9.2 ns rr I = -1A, di/dt= 100A/s S Reverse recovery charge Q 3.9 nC rr Notes: 5. AEC-Q101 V maximum is 16V. GS 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep T = 25C J 8. Short duration pulse test used to minimize self-heating effect. 9. For design aid only, not subject to production testing. 2 of 6 January 2014 DMP6250SE Diodes Incorporated www.diodes.com Document Number DS36696 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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