DMPH6050SPDQ
175C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Rated to +175C ideal for high ambient temperature
I
D
BV R
DSS DS(ON) Max
environments
T = +25C
C
100% Unclamped Inductive Switching ensures more reliable
-26A
48m @ V = -10V
GS
-60V and robust end application
60m @ V = -4.5V -23A
GS
Low R minimises power losses
DS(ON)
Low Qg minimises switching losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description and Applications
Halogen and Antimony Free. Green Device (Note 3)
This MOSFET is designed to meet the stringent requirements of
Qualified to AEC-Q101 Standards for High Reliability
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP Capable (Note 4)
PPAP and is ideal for use in:
Engine Management Systems Mechanical Data
Body Control Electronics
Case: PowerDI5060-8 (Type C)
DC-DC Converters
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D2
D1
S1
D1
G1
D1
D2
S2
G2
G1
G2 D2
Pin1
S2
S1
Bottom View
Top View Pin Out
Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMPH6050SPDQ-13 PowerDI5060-8 (Type C) 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMPH6050SPDQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage -60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C -6.3
A
Continuous Drain Current (Note 7) V = -10V I A
GS D
State -4.4
T = +100C
A
T = +25C
Steady C -26
A
Continuous Drain Current (Note 8) V = -10V I
GS D
State -18
T = +100C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -40 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 7) -2.0 A
I
S
Avalanche Current (Note 9) L = 0.1mH I -21 A
AS
Avalanche Energy (Note 9) L = 0.1mH E 30 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) T = +25C P 1.5 W
A D
Steady state
100
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s
53
Total Power Dissipation (Note 7) T = +25C P 2.8 W
A D
Steady state
52
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s
27 C/W
Thermal Resistance, Junction to Case (Note 8) R 2.9
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage -1.0 -3.0 V
V V = V , I = -250A
GS(TH) DS GS D
36 48
V = -10V, I = -5A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
44 60
V = -4.5V, I = -4A
GS D
Diode Forward Voltage -0.7 -1.2 V
V V = 0V, I = -1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance C 1525 pF
iss
V = -30V, V = 0V,
DS GS
Output Capacitance C 90 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 70 pF
rss
16
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
14.5
Total Gate Charge (V = -4.5V) Q nC
GS g
30.6
nC
Total Gate Charge (V = -10V) Q
GS g
V = -30V, I = -5A
DS D
Gate-Source Charge 4.9 nC
Q
gs
Gate-Drain Charge 5.2 nC
Q
gd
Turn-On Delay Time 5.3 ns
t
D(ON)
Turn-On Rise Time 15.4 ns
t V = -10V, V = -30V,
R GS DS
79.2
Turn-Off Delay Time t ns R = 3, I = -5A
D(OFF) G D
45.3
Turn-Off Fall Time t ns
F
Body Diode Reverse Recovery Time 15.2 ns I = -5A, di/dt = -100A/s
t F
RR
Body Diode Reverse Recovery Charge 9.3 nC I = -5A, di/dt = -100A/s
Q F
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
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DMPH6050SPDQ October 2016
Diodes Incorporated
www.diodes.com
Document number: DS38773 Rev.1 - 2
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