DMPH6050SSD 175C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature I D BV R DSS DS(ON) Max environments T = +25C A 100% Unclamped Inductive Switching ensures more reliable -5.2A 48m V = -10V GS -60V and robust end application 60m V = -4.5V -4.7A GS Low R minimises power losses DS(ON) Low Qg minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ), yet maintain superior switching performance, DS(ON) An Automotive-Compliant Part is Available Under Separate making it ideal for high-efficiency power management applications. Datasheet (DMPH6050SSDQ) Mechanical Data Applications Engine Management Systems Case: SO-8 Body Control Electronics Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (Approximate) SO-8 D1 D2 SO-8 S1 D1 Pin1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMPH6050SSD-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMPH6050SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -5.2 A Continuous Drain Current (Note 6) V = -10V I A GS D State -3.7 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -35 A DM Maximum Continuous Body Diode Forward Current (Note 6) -2.0 A I S Avalanche Current (Note 7) L = 0.1mH -25 A I AS Avalanche Energy (Note 7) L = 0.1mH 33 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.5 W A D Steady state 103 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 64 Total Power Dissipation (Note 6) T = +25C P 2.0 W A D Steady state 75 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 47 C/W Thermal Resistance, Junction to Case (Note 6) 13 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(TH) DS GS D 34 48 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 44 60 V = -4.5V, I = -4A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF C 1525 iss V = -30V, V = 0V, DS GS Output Capacitance C 90 pF oss f = 1.0MHz Reverse Transfer Capacitance C 70 pF rss 16 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 14.5 Total Gate Charge (V = -4.5V) Q nC GS g 30.6 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -5A DS D Gate-Source Charge 4.9 nC Q gs Gate-Drain Charge 5.2 nC Q gd Turn-On Delay Time 5.3 ns t D(ON) Turn-On Rise Time 15.4 ns t V = -10V, V = -30V, R GS DS Turn-Off Delay Time 79.2 ns t R = 3, I = -5A D(OFF) G D 45.3 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time 15.2 ns I = -5A, di/dt = -100A/s t F RR Body Diode Reverse Recovery Charge 9.3 nC I = -5A, di/dt = -100A/s Q F RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH6050SSD September 2016 Diodes Incorporated www.diodes.com Document number: DS38681 Rev.1 - 2 NEW PRODUCT