X-On Electronics has gained recognition as a prominent supplier of DMT10H009LK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT10H009LK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT10H009LK3-13 Diodes Incorporated

Hot DMT10H009LK3-13 electronic component of Diodes Incorporated
DMT10H009LK3-13 Diodes Incorporated
DMT10H009LK3-13 MOSFETs
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Part No. DMT10H009LK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
Datasheet: DMT10H009LK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8374 ea
Line Total: USD 0.84 
Availability - 2173
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2173
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8374
10 : USD 0.6844
30 : USD 0.6176
100 : USD 0.3625
500 : USD 0.3381
1000 : USD 0.3231

12246
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 1.4375
10 : USD 0.9768
100 : USD 0.7139
500 : USD 0.5863
1000 : USD 0.5236
2500 : USD 0.4983

   
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We are delighted to provide the DMT10H009LK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT10H009LK3-13 and other electronic components in the MOSFETs category and beyond.

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DMT10H009LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C Low R Minimizes Power Losses DS(ON) 90A 9m VGS = 10V Low Q Minimizes Switching Losses g 100V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 13m V = 4.5V 76A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description manufactured in IATF 16949 certified facilities), please This new generation MOSFET features low on-resistance and fast contact us or your local Diodes representative. switching, making it ideal for high efficiency power management DMT10H009LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS 90 T = +25C C A Continuous Drain Current, VGS = 10V ID 73 TC = +70C 360 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM Maximum Continuous Body Diode Forward Current (Note 6) 91 A IS 360 A Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) ISM Avalanche Current, L = 0.3mH 21 A IAS Avalanche Energy, L = 0.3mH E 66.2 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.7 W PD Steady State Thermal Resistance, Junction to Ambient (Note 5) R 71 C/W JA Total Power Dissipation (Note 6) P 3 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 40 JA C/W Thermal Resistance, Junction to Case R 1.1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.2 2.5 V VGS(TH) VDS = VGS, ID = 250A 6.7 9 VGS = 10V, ID = 20A Static Drain-Source On-Resistance R m DS(ON) 9.1 13 VGS = 4.5V, ID = 5A Diode Forward Voltage 0.8 1.3 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2309 Ciss V = 50V, V = 0V DS GS Output Capacitance C 536 pF oss f = 1MHz Reverse Transfer Capacitance C 15.7 rss Gate Resistance R 1.9 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 20 g V = 50V, I = 20A, DD D Gate-Source Charge Q 7.0 nC gs VGS = 4.5V Gate-Drain Charge Q 8.5 gd Turn-On Delay Time 5.4 tD(ON) Turn-On Rise Time 10.6 tR V = 50V, V = 10V, DD GS ns Turn-Off Delay Time 28.3 tD(OFF) ID = 20A, Rg = 3 Turn-Off Fall Time 14.9 tF Reverse Recovery Time t 44.3 ns RR IF = 20A, di/dt = 100A/s Reverse Recovery Charge Q 65.5 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H009LK3 November 2019 Diodes Incorporated www.diodes.com Document number: DS42130 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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