Green DMT10H010SPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable I D BV R Max DSS DS(ON) and Robust End Application T = +25C C Low R Minimizes On-State Losses DS(ON) 113A 8.8m VGS = 10V Fast Switching Speed 100V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 11.5m V = 6V 98A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: PowerDI 5060-8 This new generation N-channel enhancement mode MOSFET is Case Material: Molded Plastic, Green Molding Compound. designed to minimize R , yet maintain superior switching DS(ON) UL Flammability Classification Rating 94V-0 performance. This device is ideal for use in notebook battery power Moisture Sensitivity: Level 1 per J-STD-020 management and load switch. Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Motor Control DC-DC Converters Power Management PowerDI5060-8 D S D Pin1 S D S D G D G S Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT10H010SPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT10H010SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10.7 A A Continuous Drain Current, V = 10V (Note 5) I GS D 8.6 T = +70C A T = +25C 113 C A Continuous Drain Current, V = 10V (Note 6) I GS D 90 T = +70C C 250 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 100 Maximum Continuous Body Diode Forward Current I A S 33.7 Avalanche Current, L=0.3mH I A AS Avalanche Energy, L=0.3mH 170 mJ E AS Avalanche Current (Note 8), L=3mH 14.3 A I AS Avalanche Energy (Note 8), L=3mH 307 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 99 C/W R JA 139 Total Power Dissipation (Note 6) T = +25C P W C D 0.9 Thermal Resistance, Junction to Case (Note 6) R C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 6.6 8.8 V = 10V, I = 13A GS D Static Drain-Source On-Resistance R m DS(ON) 8.5 11.5 V = 6V, I = 13A GS D Diode Forward Voltage 0.8 1.3 V V V = 0V, I = 13A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 4,468 C ISS V = 50V, V = 0V DS GS Output Capacitance 746 pF C OSS f = 1MHz Reverse Transfer Capacitance 32 C RSS 0.91 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 56.4 Total Gate Charge Q G V = 50V, I = 13A, DD D 15.4 Gate-Source Charge Q nC GS V = 10V GS 14 Gate-Drain Charge Q GD 18.6 Turn-On Delay Time t D(ON) Turn-On Rise Time 22.5 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 44.8 I = 13A, R = 6 t D g D(OFF) Turn-Off Fall Time 29.5 t F Reverse Recovery Time 54.5 ns t RR I = 13A, di/dt = 100A/s F 106.4 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H010SPS August 2017 Diodes Incorporated www.diodes.com Document number: DS39424 Rev. 2 - 2