DMT35M7LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C 76A Density End Products 5.0m V = 10V GS 30V Occupies just 33% of the Board Area Occupied by SO-8 Enabling 58A 8.5m V = 4.5V GS Smaller End Product ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 3333-8 (Type UX) Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. Analog Switch UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Pin1 D S S S G ESD PROTECTED G Gate Protection D D S Diode D D Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT35M7LFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMT35M7LFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT35M7LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 76 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 61 T = +70C C Maximum Body Diode Forward Current (Note 6) 2.7 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 90 A I DM Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) 90 A I SM Avalanche Current (L = 0.1mH) (Note 8) I 28 A AS Avalanche Energy (L = 0.1mH) (Note 8) E 39 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.95 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 131 C/W R JA Total Power Dissipation (Note 6) 1.98 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 63 R JA C/W Thermal Resistance, Junction to Case (Note 7) 2.9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C) I V = 24V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 2.4 V V V = V , I = 250A GS(TH) DS GS D 3.6 5.0 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m RDS(ON) 6.8 8.5 V = 4.5V, I = 16A GS D 0.7 Diode Forward Voltage V 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) 1,667 Input Capacitance C iss V = 15V, V = 0V, DS GS 573 Output Capacitance C pF oss f = 1.0MHz 534 Reverse Transfer Capacitance C rss 0.75 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS 21 Total Gate Charge (V = 4.5V) Q GS g 36 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 20A DD D Gate-Source Charge 4.8 Q gs Gate-Drain Charge 14 Q gd 5.3 Turn-On Delay Time t D(ON) 12.3 Turn-On Rise Time t V = 15V, V = 10V, R DD GS ns 18.0 Turn-Off Delay Time t R = 3, I = 20A D(OFF) g D 15.5 Turn-Off Fall Time t F 16 Reverse Recovery Time t ns RR I = 15A, di/dt = 500A/s F 14 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT35M7LFV October 2018 Diodes Incorporated www.diodes.com Document number: DS39725 Rev. 4 - 2 ADVANCED INFORMATION