DMT4003SCT Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I D BV R DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C Low Input Capacitance 40V 3m V = 10V 205A GS High BV Rating for Power Application DSS Low Input/Output Leakage Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management Mechanical Data applications. Case: TO220AB Motor Control Case Material: Molded Plastic, Green Molding Compound. UL Backlighting Flammability Classification Rating 94V-0 DC-DC Converters Terminals: Matte Tin Finish Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 2.24 grams (Approximate) TO220AB (Generic) Top View Top View Bottom View Pin Out Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT4003SCT TO220AB (Generic) 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT4003SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 205 C Continuous Drain Current (Note 5) I A D 164 T = +70C C 350 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 100 Maximum Continuous Body Diode Forward Current (Note 5) T = +25C I A C S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 350 A I SM Avalanche Current (Note 6), L = 0.1mH 65.7 A I AS Avalanche Energy (Note 6), L = 0.1mH 215 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 156 W P D Thermal Resistance, Junction to Case (Note 5) 0.8 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 2.5 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.4 3 m V = 10V, I = 90A DS(ON) GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 6865 Ciss V = 20V, V = 0V, DS GS 1898 Output Capacitance pF C oss f = 1MHz Reverse Transfer Capacitance 21.4 C rss Gate Resistance 1.15 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 75.6 Q G V = 20V, I = 90A, DD D Gate-Source Charge 23.8 nC Q GS V = 10V GS 11.3 Gate-Drain Charge Q GD 13.4 Turn-On Delay Time t D(ON) 41.2 Turn-On Rise Time t R V = 20V, V = 10V, DD GS ns 34.4 Turn-Off Delay Time t I = 90A, R = 3.5 D(OFF) D G 15.8 Turn-Off Fall Time t F Reverse Recovery Time 59.4 ns t RR I = 50A, di/dt = 100A/s F Reverse Recovery Charge 102 nC Q RR Notes: 5. Device mounted on an infinite heatsink. 6. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 September 2018 DMT4003SCT www.diodes.com Diodes Incorporated Document number: DS40104 Rev. 4 - 2