DMT4011LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R Ensures On State Losses Are Minimized DS(ON) I max D Excellent Q R Product (FOM) gd x DS(ON) BV R max DSS DS(ON) T = +25C C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 11.5m V = 10V 30A GS Density End Products 40V 17.8m V = 4.5V 24A 100% UIS (Avalanche) Rated GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: PowerDI3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.008 grams (Approximate) DC-DC Converters PowerDI3333-8 D Pin 1 S S 8 1 S G 7 2 G 6 3 D D 5 4 D S D Top View Top View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT4011LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT4011LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT4011LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS +20 Gate-Source Voltage V V GSS -16 T = +25C 30 C A Continuous Drain Current (Note 5) VGS = 10V ID 24 T = +70C C T = +25C 10.8 A A Continuous Drain Current (Note 5) V = 10V I GS D 8.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 2.1 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 65 A DM Avalanche Current, L=0.3mH I 11.9 A AS Avalanche Energy, L=0.3mH 21.4 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2 W A D Thermal Resistance, Junction to Ambient (Note 5) 62 C/W R JA Total Power Dissipation (Note 5) 15.6 W T = +25C P C D Thermal Resistance, Junction to Case (Note 5) 8 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 40 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 32V, V = 0V DSS DS GS 100 V = +20V, V = 0V GS DS Gate-Source Leakage I - - nA GSS -100 V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - 9.2 11.5 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) - 13.4 17.8 V = 4.5V, I = 20A GS D Diode Forward Voltage - - 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance - 767 - C iss VDS = 20V, VGS = 0V, 238 Output Capacitance C - - pF oss f = 1MHz 30.6 Reverse Transfer Capacitance C - - rss 1 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 7 Total Gate Charge (V = 4.5V) Q - - GS g 15.1 - - Total Gate Charge (VGS = 10V) Qg nC V = 20V, I = 20A DS D 2.1 Gate-Source Charge - - Q gs Gate-Drain Charge - 3.2 - Q gd Turn-On Delay Time - 3.5 - t D(ON) Turn-On Rise Time - 5.8 - t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time - 9.6 - t R = 1.6, I = 20A D(OFF) G D 2 Turn-Off Fall Time t - - F - 9.8 - Body Diode Reverse Recovery Time t ns RR I = 15A, di/dt = 400A/s F - 5.1 - Body Diode Reverse Recovery Charge Q nC RR Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. R is guaranteed by design JA JC while RJA is determined by the users board design. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT4011LFG October 2016 Diodes Incorporated www.diodes.com Document number: DS37919 Rev. 3 - 2