DMT6009LJ3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C and Robust End Application C Low R Ensures On State Losses Are Minimized 10m V = 10V 74.5A DS(ON) GS 60V Excellent Q R Product (FOM) gd x DS(ON) 12.8m V = 4.5V 65.8A GS Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: TO251 (Type TH) This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high-efficiency power-management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.33 grams (Approximate) TO251 (Type TH) G D S Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT6009LJ3 TO251 (Type TH) 75 Pieces / Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. All applicable RoHS exemptions applied. 2. See DMT6009LJ3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 16 V GSS T = +25C 74.5 C Continuous Drain Current (Note 7) A I D 59.6 T = +70C C Maximum Body Diode Forward Current (Note 7) 50 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 280 A I DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 280 A I SM Avalanche Current, L=0.1mH I 28.2 A AS Avalanche Energy, L=0.1mH E 39.8 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) W T = +25C P 2.9 A D Thermal Resistance, Junction to Ambient (Note 6) C/W R 43 JA Thermal Resistance, Junction to Ambient (Note 5) C/W R 80 JA Total Power Dissipation (Note 7) 83.3 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) R 1.5 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V V 0.7 2 V = V , I = 250A GS(TH) DS GS D 8 10 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance R m DS(ON) 9.8 12.8 V = 4.5V, I = 11.5A GS D Diode Forward Voltage 0.8 V V 1.2 V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1925 iss V = 30V, V = 0V, DS GS 438 Output Capacitance C pF oss f = 1MHz 41 Reverse Transfer Capacitance C rss 1.7 Gate Resistance R g V = 0V, V = 0V, f = 1MHz DS GS 15.6 Total Gate Charge (V = 4.5V) Qg GS 33.5 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 13.5A DS D Gate-Source Charge 4.7 Q gs Gate-Drain Charge 5.3 Q gd Turn-On Delay Time 4.5 t D(ON) 8.6 Turn-On Rise Time t R V = 30V, V = 10V, DD GS ns 35.9 Turn-Off Delay Time t R = 6, I = 13.5A D(OFF) g D 15.7 Turn-Off Fall Time t F 18.2 Body Diode Reverse Recovery Time t ns RR I = 13.5A, di/dt = 400A/s F 33.1 Body Diode Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMT6009LJ3 August 2018 Diodes Incorporated www.diodes.com Document number: DS39077 Rev. 3 - 2