DMT6009LK3
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Max Low R Ensures On State Losses Are Minimized
D DS(ON)
BV R Max
DSS DS(ON)
T = +25C Excellent Q R Product (FOM)
C gd x DS(ON)
Advanced Technology for DC/DC Converters
10m @ V = 10V 57A
GS
Small Form Factor Thermally Efficient Package Enables Higher
60V
Density End Products
12.8m @ V = 4.5V 51A
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
This new generation MOSFET is designed to minimize the on-state Case: TO252
resistance (R ) and yet maintain superior switching performance,
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
making it ideal for high- efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Backlighting
Weight: 0.33 grams (Approximate)
Equivalent Circuit
Top View Pin Out Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMT6009LK3-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMT6009LK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 16 V
GSS
T = +25C 13.3
A
A
Continuous Drain Current (Note 5) V = 10V I
GS D
10.6
T = +70C
A
T = +25C 57
C
Continuous Drain Current (Note 6) V = 10V I A
GS D
46
T = +70C
C
Maximum Continuous Body Diode Forward Current (Note 6) I 80 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 90 A
DM
Avalanche Current, L=0.1mH 20.3 A
IAS
Avalanche Energy, L=0.1mH 20.6 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.6 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W
JA
Total Power Dissipation (Note 6) 50 W
P
D
Thermal Resistance, Junction to Case (Note 6) R 2.5 C/W
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current - - 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage - - 100 nA
I V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.7 1.4 2 V
V V = V , I = 250A
GS(TH) DS GS D
- 8.3 10 m
V = 10V, I = 13.5A
GS D
Static Drain-Source On-Resistance R
DS(ON)
- 9.6 12.8 m
V = 4.5V, I = 11.5A
GS D
Diode Forward Voltage V - 0.9 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
1,925
Input Capacitance C - -
iss
V = 30V, V = 0V,
DS GS
438
Output Capacitance C - - pF
oss
f = 1MHz
41
Reverse Transfer Capacitance C - -
rss
1.7
Gate Resistance R - - V = 0V, V = 0V, f = 1MHz
g DS GS
15.6
- -
Total Gate Charge (V = 4.5V) Q
GS g
- 33.5 -
Total Gate Charge (V = 10V) Q
GS g
nC V = 30V, I = 13.5A
DS D
Gate-Source Charge - 4.7 -
Q
gs
Gate-Drain Charge - 5.3 -
Q
gd
Turn-On Delay Time - 4.5 -
t
D(ON)
8.6
Turn-On Rise Time t - - V = 30V, V = 10V,
R DD GS
ns
35.9
Turn-Off Delay Time t - - R = 6, I = 13.5A
D(OFF) G D
15.7
Turn-Off Fall Time t - -
F
18.2
Body Diode Reverse Recovery Time t - - ns
RR
I = 13.5A, di/dt = 400A/s
F
33.1
Body Diode Reverse Recovery Charge Q - - nC
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT6009LK3 December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38207 Rev. 3 - 2
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