DMT6012LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application TA = +25C High Conversion Efficiency 11m VGS = 10V 10.4A Low R Minimizes On-State Losses DS(ON) 60V Low Input Capacitance 14m VGS = 4.5V 9.3A Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and This MOSFET is designed to minimize the on-state resistance manufactured in IATF 16949 certified facilities), please (RDS(ON)) yet maintain superior switching performance, making it ideal contact us or your local Diodes representative. for high efficiency power management applications. DMT6012LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 10.4 A A Continuous Drain Current (Note 6) VGS = 10V ID State 8.4 TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) 10 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 65 A 15.8 Avalanche Current, L = 0.3mH I A AS 37.5 Avalanche Energy, L = 0.3mH E mJ AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W TA = +25C PD Steady State Thermal Resistance, Junction to Ambient (Note 5) R 106 C/W JA Total Power Dissipation (Note 6) 1.84 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 68 C/W RJA Thermal Resistance, Junction to Case (Note 6) 9.2 C/W RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A IDSS VDS = 48V, VGS = 0V Gate-Source Leakage 10 A IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.7 2 V V = V , I = 250A GS(TH) DS GS D 8.4 11 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m RDS(ON) 11.5 14 VGS = 4.5V, ID = 5A Diode Forward Voltage 0.8 1.2 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1522 iss VDS = 30V, VGS = 0V, Output Capacitance C 352 pF oss f = 1MHz Reverse Transfer Capacitance 27.5 Crss Gate Resistance 1.4 Rg VDS = 0V, VGS = 0V, f = 1MHz 10.7 Total Gate Charge (VGS = 4.5V) Qg 22.2 Total Gate Charge (VGS = 10V) Qg nC V = 30V, I = 10A DS D Gate-Source Charge 3.3 Q gs Gate-Drain Charge Q 4.2 gd Turn-On Delay Time t 4.4 D(ON) Turn-On Rise Time t 6.7 R VGS = 10V, VDS = 30V, ns Turn-Off Delay Time t 25.5 RG = 6, ID = 10A D(OFF) Turn-Off Fall Time t 12.5 F Body Diode Reverse Recovery Time ns tRR 25.8 I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC QRR 15.1 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT6012LSS October 2020 Diodes Incorporated www.diodes.com Document number: DS40135 Rev. 3 - 2 ADVANCED INFORMATION