DMT6013LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C A 10A 14.3m V = 10V High Conversion Efficiency GS 60V 21m V = 4.5V 8.1A GS Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) and maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 High Frequency Switching Terminal Connections Indicator: See Diagram Synchronous Rectification Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) SO-8 D S D Pin 1 D S G S D D G S Pin-Out Equivalent Circuit Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMT6013LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT6013LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 10 A A Continuous Drain Current (Note 6) V = 10V I GS D 7.8 T = +70C A T = +25C 8.1 A Continuous Drain Current (Note 6) V = 4.5V I A GS D 6.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Maximum Continuous Body Diode Forward Current 10 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 60 A I SM Avalanche Current (Note 7) L = 0.1mH 17.1 A I AS 14.6 Avalanche Energy (Note 7) L = 0.1mH E mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W PD Thermal Resistance, Junction to Ambient (Note 5) 89.8 C/W R JA Total Power Dissipation (Note 6) P 2.1 W D Thermal Resistance, Junction to Ambient (Note 6) 60.4 C/W R JA Thermal Resistance, Junction to Case (Note 6) 25.7 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 2.5 V V V = V , I = 250A GS(TH) DS GS D 11.2 14.3 V = 10V, I = 10A GS D Static Drain-Source On-Resistance R m DS(ON) 16.1 21 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1081 iss V = 30V, V = 0V, DS GS Output Capacitance C 253 pF oss f = 1MHz Reverse Transfer Capacitance C 22 rss Gate Resistance R 1.22 V = 0V, V = 0V, f = 1MHz g DS GS 8.5 Total Gate Charge (V = 4.5V) Q GS g 15 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 10A DS D Gate-Source Charge 2.2 Q gs Gate-Drain Charge 4.4 Q gd Turn-On Delay Time 4.3 t D(ON) Turn-On Rise Time t 6.5 V = 10V, V = 30V, R GS DS ns Turn-Off Delay Time t 15.8 R = 6, I = 10A D(OFF) G D Turn-Off Fall Time t 6.1 F Reverse Recovery Time t 19.7 ns RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge Q 9.5 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 January 2019 DMT6013LSS Diodes Incorporated www.diodes.com Document number: DS39223 Rev. 3 -2 NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION