DMT6015LFVW 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application TC = +25C 31.8A Low On-Resistance 16m VGS = 10V 60V Small Form Factor Thermally Efficient Package Enables Higher 22m V = 4.5V 27.6A GS Density End Products Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMT6015LFVW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 16 V GSS TC = +25C 31.8 Continuous Drain Current, V = 10V (Note 6) I A GS D 25.5 TC = +70C TA = +25C 10.0 Steady A Continuous Drain Current, VGS = 10V (Note 5) ID State 8.0 T = +70C A 127 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM Maximum Continuous Body Diode Forward Current (Note 6) I 31.8 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 127 A ISM Avalanche Current, L = 0.1mH 20.7 A IAS Avalanche Energy, L = 0.1mH 21.4 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.8 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 44.2 C/W RJA Total Power Dissipation (Note 6) 28.4 W TC = +25C PD Thermal Resistance, Junction to Case (Note 6) 4.4 C/W RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.2 2.5 V VGS(TH) VDS = VGS, ID = 250A 11.3 16 VGS = 10V, ID = 10A Static Drain-Source On-Resistance R m DS(ON) 15.8 22 VGS = 4.5V, ID = 6A Diode Forward Voltage 0.7 1.2 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 808 pF Ciss V = 30V, V = 0V, DS GS Output Capacitance 279 pF Coss f = 1MHz Reverse Transfer Capacitance C 30 pF rss Gate Resistance R 1.4 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 8.6 nC GS g Total Gate Charge (V = 10V) Q 15.7 nC GS g VDS = 30V, ID = 10A Gate-Source Charge 2.9 nC Qgs Gate-Drain Charge 3.4 nC Qgd Turn-On Delay Time 7.5 ns tD(ON) Turn-On Rise Time 2.7 ns tR V = 30V, V = 10V, DD GS Turn-Off Delay Time 17.4 ns R = 6, I = 10A tD(OFF) g D Turn-Off Fall Time tF 8.9 ns Body Diode Reverse Recovery Time t 26.7 ns RR IF = 10A, di/dt = 100A/s Body Diode Reverse Recovery Charge Q 16.2 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT6015LFVW July 2020 Diodes Incorporated www.diodes.com Document number: DS42751 Rev. 2 - 2