DMT68M8LFV 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) T = +25C Ensures More Reliable And Robust End Application C Low R Ensures On-State Losses are Minimized 9.5m V = 10V 54.1A DS(ON) GS 60V Small Form Factor Thermally Efficient Package Enables Higher 13.3m V = 4.5V 45.7A GS Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 S S S G D D ESD PROTECTED D D Bottom View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMT68M8LFV-7 2000/Tape & Reel PowerDI3333-8 (Type UX) DMT68M8LFV-13 3000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT68M8LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 54.1 C Continuous Drain Current (Note 6) V = 10V I A GS D 43.3 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 210 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 50 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 210 A I SM Avalanche Current, L = 0.1mH 28 A I AS Avalanche Energy, L = 0.1mH 39 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.7 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 47 C/W R JA Total Power Dissipation (Note 6) 41.7 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R 3 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 6.6 9.5 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance R m DS(ON) 9.1 13.3 V = 4.5V, I = 11.5A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 13.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2078 pF iss V = 30V, V = 0V, DS GS Output Capacitance C 605 pF oss f = 1MHz Reverse Transfer Capacitance C 44 pF rss Gate Resistance R 1.71 V = 0V, V = 0V, f = 1MHz g DS GS 30 nC Total Gate Charge (V = 10V) Q GS g 14.4 nC Total Gate Charge (V = 4.5V) Q GS g V = 30V, I = 20A DD D Gate-Source Charge 4.1 nC Q gs Gate-Drain Charge 6.7 nC Q gd Turn-On Delay Time 5.2 ns t D(ON) Turn-On Rise Time t 9.6 ns V = 30V, V = 10V, R DD GS Turn-Off Delay Time t 20.5 ns I = 20A, R = 3.3 D(OFF) D g Turn-Off Fall Time t 8.9 ns F Body Diode Reverse Recovery Time ns t 32.5 RR IF = 20A, di/dt = 100A/s Body Diode Reverse Recovery Charge 22.8 nC QRR Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad) 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT68M8LFV November 2018 Diodes Incorporated www.diodes.com Document number: DS40626 Rev. 2 - 2 ADVANCED INFORMATION ADVANCED INFORMATION