DMT69M8LSS-13 Diodes Incorporated

Name: DMT69M8LSS-13
Brand: Diodes Incorporated
SKU: DMT69M8LSS13_Diodes_Incorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

DMT69M8LSS-13 electronic component of Diodes Incorporated

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMT69M8LSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT69M8LSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	DMT69M8LSS-13
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET 60V N-Ch Enh FET 14mOhm 4.5Vgs 8.4A
Datasheet:	DMT69M8LSS-13 Datasheet (PDF)

Price (USD)

1: USD 0.1911 ea
Line Total: USD 0.19

Availability : 0

Qty	Unit Price
1	$ 0.1911
10	$ 0.1874
30	$ 0.1849
100	$ 0.1824

DMT69M8LSS-13 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 15 Aug to Wed. 20 Aug

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.1911
10	$ 0.1874
30	$ 0.1849
100	$ 0.1824

Specifications

Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SO - 8 SO - 8
Brand Category Diodes Incorporated Diodes Incorporated
Fet Type - -
Drain To Source Voltagevdss - -
Continuous Drain Current Id @ 25°C - -
Vgsth Max @ Id - -
Rds On Max @ Id Vgs - -
Power Dissipation-Max Ta 25°C - -
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 9.8 A 9.8 A
Drain Source On Resistance Rdson@Vgs Id 12 mOhms @10V , 13.5A 12 mOhms @10V , 13.5A
Power Dissipation Pd 1.25 W 1.25 W
Gate Threshold Voltage Vgsth@Id 2 V @250uA 2 V @250uA
Type N Channel N Channel

We are delighted to provide the DMT69M8LSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT69M8LSS-13 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Diodes Incorporated DMT69M8LSS-13 is an N-channel enhancement field-effect transistor (MOSFET) with a peaked 60V drain-to-source voltage rating. It has a low on-resistance of 14mOhms and a 4.5V gate-to-source voltage rating, allowing for maximum effective current delivery of 8.4A. This particular MOSFET is manufactured by Diodes Incorporated in their PQFN (Plastic Quad Flat No-lead) package, measuring 6 x 6mm x 0.9mm with electrical terminals in a surface-mount configuration.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Diodes
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PER
Pericom
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Pericom Semiconductor
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