DMTH10H010LCTB Green 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to +175CIdeal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C C Environments 100% Unclamped Inductive SwitchingEnsures More Reliable 100V 9.5m V = 10V 100A GS and Robust End Application Low R Minimizes Power Losses DS(ON) Low QgMinimizes Switching Losses Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This new generation N-channel enhancement mode MOSFET is Case: TO263AB (D2PAK) designed to minimize R yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(ON) performance. This device is ideal for high-efficiency power UL Flammability Classification Rating 94V-0 management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Synchronous Rectification Weight: 1.7 grams (Approximate) Inverter DC-DC Converters TO263AB (D2PAK) Top View Pin Out Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMTH10H010LCTB-13 TO263AB (D2PAK) 800 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H010LCTB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 100 C Continuous Drain Current A I D 71 T = +100C C Maximum Continuous Body Diode Forward Current 110 A T = +25C I C S 400 A Pulsed Drain Current (10s Pulse, T =+25C, Package Limited ) I C DM 400 Pulsed Body Diode Forward Current (10s Pulse, TC=+25C, Package Limited ) I A SM 35 Avalanche Current, L=0.3mH (Note 7) I A AS 187 Avalanche Energy, L=0.3mH (Note 7) E mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3.9 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 32 C/W R JA Total Power Dissipation 125 W T = +25C P C D Thermal Resistance, Junction to Case R 1.0 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1.4 2.0 3.5 V V V = V , I = 250A GS(TH) DS GS D 8.7 9.5 V = 10V, I = 13A GS D Static Drain-Source On-Resistance R m DS(ON) 13.2 17 V = 4.5V, I = 13A GS D Diode Forward Voltage 0.8 1.3 V V V = 0V, I = 13A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 2592 C iss V = 50V, V = 0V DS GS 792 Output Capacitance C pF oss f = 1MHz 45 Reverse Transfer Capacitance C rss 2 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 53.7 Total Gate Charge Q g V = 50V, I = 13A, DD D 10.6 Gate-Source Charge nC Qgs V = 10V GS 8.2 Gate-Drain Charge Q gd Turn-On Delay Time 11.6 t D(ON) Turn-On Rise Time 14.1 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 42.9 t I = 13A, R = 6 D(OFF) D g Turn-Off Fall Time 22 t F 49.8 Reverse Recovery Time t ns RR I = 13A, di/dt = 100A/s F 85.1 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 July 2018 DMTH10H010LCTB Diodes Incorporated www.diodes.com Document number: DS38064 Rev. 3 - 2 ADVANCED INFORMATION