DMTH43M8LFG Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max (Note 9) D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching, Test in Production 3.0m V = 10V 100A GS Ensures More Reliable and Robust End Application 40V Low R Ensures On-State Losses are Minimized DS(ON) 5.0m V = 5V 93A GS Excellent Q R Product (FOM) GD DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH43M8LFGQ) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (R ) yet maintain superior switching performance, making it ideal DS(ON) Case Material: Molded Plastic,Gree Molding Compound. for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish Matte Tin Annealed over Copper Leadframe. Power Management Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 Pin 1 S D S 8 1 S G 7 2 6 3 G D D D 5 4 D S Top View Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMTH43M8LFG-7 2000/Tape & Reel PowerDI3333-8 DMTH43M8LFG-13 3000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH43M8LFG Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 100 C Continuous Drain Current (Notes 6 & 9) V = 10V I A GS D 85 T = +100C C T = +25C 24.0 A A Continuous Drain Current (Note 5) V = 10V I GS D 16.9 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 400 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3.05 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 400 A SM Avalanche Current, L = 1mH I 18.2 A AS Avalanche Energy, L = 1mH 165 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.62 W A D Thermal Resistance, Junction to Ambient (Note 5) 57.8 C/W R JA Total Power Dissipation (Note 6) T = +25C P 65.2 W C D Thermal Resistance, Junction to Case (Note 6) 2.3 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) J Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 1.5 2.5 V V V = V , I = 250A GS(TH) DS GS D 2.3 3.0 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R DS(ON) 3.4 5.0 V = 5V, I = 15A GS D m 6.0 V = 10V, I = 20A GS D Static Drain-Source On-Resistance (T = +175C) (Note 8) R J DS(ON) 9.0 V = 5V, I = 15A GS D Diode Forward Voltage V 0.8 1.0 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2798 C iss V = 20V, V = 0V, DS GS Output Capacitance 904 pF C oss f = 1MHz Reverse Transfer Capacitance 88 C rss Gate Resistance 2.44 R V = 0V, V = 0V, f = 1MHz G DS GS 40.1 Total Gate Charge (V = 10V) Q GS G Gate-Source Charge Q 5.2 nC V = 20V, I = 20A, V = 10V GS DS D GS Gate-Drain Charge Q 8.8 GD Turn-On Delay Time t 5.16 D(ON) Turn-On Rise Time t 10.7 R V = 20V, V = 10V, DD GS ns Turn-Off Delay Time t 24.6 R = 1.6, I = 20A D(OFF) G D Turn-Off Fall Time 12.4 t F Body Diode Reverse Recovery Time 32.6 ns t RR I = 15A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 26.6 nC Q RR Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limit. 2 of 7 DMTH43M8LFG January 2019 Diodes Incorporated www.diodes.com Document number: DS40743 Rev. 3 - 2