Green DMTH6016LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 17m V = 10V 46.9A GS and Robust End Application 60V Low R Ensures On State Losses Are Minimized DS(ON) 24m V = 4.5V 38.3A GS Excellent Q R Product (FOM) gd x DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6016LK3Q) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Mechanical Data Case: TO252 (DPAK) Power Management Functions Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH6016LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH6016LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10.8 A Continuous Drain Current (Note 5) V = 10V I A GS D 7.6 T = +100C A T = +25C 46.9 C A Continuous Drain Current (Note 6) V = 10V I GS D 33.2 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) I 50 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 70 A DM Avalanche Current, L=0.1mH I 15.3 A AS Avalanche Energy, L=0.1mH E 11.7 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3.2 W P D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) P 60 W D Thermal Resistance, Junction to Case (Note 6) 2.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 - 3 V VGS(TH) VDS = VGS, ID = 250A - 11 17 m V = 10V, I = 10A GS D Static Drain-Source On-Resistance R DS(ON) - 16 24 m V = 4.5V, I = 6A GS D Diode Forward Voltage - 0.9 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 864 - C iss V = 30V, V = 0V, DS GS Output Capacitance - 282 - pF C oss f = 1MHz Reverse Transfer Capacitance C - 27.1 - rss Gate Resistance R - 1.35 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q - 17 - GS g Total Gate Charge (V = 4.5V) Q - 8.4 - GS g nC V = 30V, I = 10A DS D Gate-Source Charge - 3.1 - Qgs Gate-Drain Charge - 4.3 - Q gd Turn-On Delay Time - 3.4 - t D(ON) Turn-On Rise Time - 5.2 - t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time - 12.9 - t R = 6, I = 10A D(OFF) G D Turn-Off Fall Time - 6.8 - t F Body Diode Reverse Recovery Time t - 22 - ns RR I = 10A, di/dt = 400A/s F Body Diode Reverse Recovery Charge Q - 11.1 - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6016LK3 April 2018 Diodes Incorporated www.diodes.com Document number: DS38738 Rev. 2 - 2