DSS4320T-7 Diodes Incorporated

DSS4320T-7 electronic component of Diodes Incorporated
DSS4320T-7 Diodes Incorporated
DSS4320T-7 Bipolar Transistors - BJT
DSS4320T-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DSS4320T-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS4320T-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DSS4320T-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 20V 2A
Datasheet: DSS4320T-7 Datasheet (PDF)
Price (USD)
1: USD 0.4625 ea
Line Total: USD 0.46 
Availability : 7653
  
Ship by Wed. 20 Aug to Fri. 22 Aug
QtyUnit Price
1$ 0.4625
10$ 0.285
100$ 0.1716
500$ 0.1177
1000$ 0.1034
3000$ 0.0869
6000$ 0.0836
9000$ 0.0638

Availability 7653
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4625
10$ 0.285
100$ 0.1716
500$ 0.1177
1000$ 0.1034
3000$ 0.0869
6000$ 0.0836
9000$ 0.0638


Availability 1217
Ship by Fri. 29 Aug to Wed. 03 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1796
50$ 0.144
150$ 0.126
500$ 0.076
3000$ 0.0689
6000$ 0.0652

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS4320T-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS4320T-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS4320T LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Complimentary PNP Type Available (DSS5320T) Moisture Sensitivity: Level 1 per J-STD-020D Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe. Green Device (Note 2) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 20 V V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5 V EBO Peak Pulse Current I 5 A CM Repetitive Peak Pulse Current (Note 3) I 3 A CRP Continuous Collector Current 2 A I C Base Current 0.5 A I B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) T = 25C P 600 mW A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 209 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DSS4320T Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS 100 nA V = 20V, I = 0 CB E Collector-Base Cutoff Current I CBO 50 A V = 20V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 100 nA V = 5V, I = 0 EBO EB C Collector-Base Breakdown Voltage V 20 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage (Note 5) V 20 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 5 V I = 100A (BR)EBO E ON CHARACTERISTICS (Note 5) 220 V = 2V, I = 0.1A CE C 220 V = 2V, I = 0.5A CE C DC Current Gain 220 h V = 2V, I = 1A FE CE C 200 V = 2V, I = 2A CE C 150 V = 2V, I = 3A CE C 70 I = 0.5A, I = 50mA C B 120 I = 1A, I = 50mA C B Collector-Emitter Saturation Voltage V 230 mV I = 2A, I = 40mA CE(SAT) C B 70 210 I = 2A, I = 200mA C B 310 I = 3A, I = 300mA C B Equivalent On-Resistance R 35 105 m I = 2A, I = 200mA CE(SAT) E B 1.1 V I = 2A, I = 40mA C B Base-Emitter Saturation Voltage V BE(SAT) 1.2 V I = 3A, I = 300mA C B Base-Emitter Turn-on Voltage 1.2 V V V = 2V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 5V, I = 100mA, CE C Transition Frequency f 100 MHz T f = 100MHz Output Capacitance C 35 pF V = 10V, f = 1MHz ob CB Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 800 10 700 Pw = 10ms 600 1 Pw = 100ms 500 DC 400 0.1 300 0.01 200 R = 209C/W 100 JA 0.001 0 0.1 1 10 100 0 25 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) CE T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) vs. Collector-Emitter Voltage 2 of 5 November 2008 DSS4320T Diodes Incorporated www.diodes.com Document number: DS31621 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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