DSS5540X-13 Diodes Incorporated

DSS5540X-13 electronic component of Diodes Incorporated
DSS5540X-13 Diodes Incorporated
DSS5540X-13 Bipolar Transistors - BJT
DSS5540X-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DSS5540X-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DSS5540X-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DSS5540X-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIPOLAR TRANS PNP
Datasheet: DSS5540X-13 Datasheet (PDF)
Price (USD)
1: USD 0.925 ea
Line Total: USD 0.92 
Availability : 3651
  
Ship by Thu. 13 Nov to Mon. 17 Nov
QtyUnit Price
1$ 0.925
10$ 0.5712
100$ 0.3163
500$ 0.2387
1000$ 0.2068
2500$ 0.1859
5000$ 0.1705
10000$ 0.1672

Availability 3651
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.925
10$ 0.5712
100$ 0.3163
500$ 0.2387
1000$ 0.2068
2500$ 0.1859
5000$ 0.1705
10000$ 0.1672


Availability 2699
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.924
10$ 0.5446
72$ 0.266
197$ 0.252
1000$ 0.2422


Availability 916
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.346
50$ 0.3052
150$ 0.1943
500$ 0.1795
2500$ 0.1729
5000$ 0.1689

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSS5540X-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSS5540X-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DSS5540X 40V LOW V PNP SURFACE MOUNT TRANSISTOR CE(sat) Features Mechanical Data Ultra Low Collector-Emitter Saturation Voltage Case: SOT89 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 Lead Free, RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe Halogen and Antimony Free.Gree Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.055 grams (approximate) SOT89 Device Schematic Pin-Out Top Top View Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS5540X-13 ZPS54 13 12mm 2,500 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at DSS5540X Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage -6 V V EBO Peak Pulse Collector Current -10 A I CM Repetitive Peak Pulse Collector Current (Note 4) -5 A I CRP Continuous Collector Current -4 A I C Peak Pulse Base Current I -2 A BM Continuous Base Current I -1 A B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) T = 25C P 0.9 W A D 139 C/W Thermal Resistance, Junction to Ambient Air (Note 5) T = 25C R A JA Power Dissipation (Note 6) T = 25C P 2 W A D 62.5 C/W Thermal Resistance, Junction to Ambient Air (Note 6) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Pulse width 10ms Duty cycle 0.2 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 6. Device mounted on FR-4 PCB with 1inch copper pad layout. 2.4 2.0 1.6 Note 6 1.2 0.8 Note 5 0.4 0 050 100 150 200 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R (t) = r(t) * R JA JA R = 135C/W D = 0.02 JA 0.01 D = 0.01 P(pk) t 1 t D = 0.005 2 T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , PULSE DURATION TIME (s) 1 Fig. 2 Transient Thermal Response 2 of 5 October 2010 DSS5540X Diodes Incorporated www.diodes.com Document number: DS31653 Rev. 2 - 2 P , POWER DISSIPATION (W) D r(t), TRANSIENT THERMAL RESISTANCE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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