DXTP07100BFG 100V PNP HIGH PERFORMANCE TRANSISTOR IN POWERDI3333-8 Features Mechanical Data BV > -100V CEO Case: PowerDI3333-8 Small Form Factor Thermally Efficient Package. Case Material: Molded Plastic. Green Molding Compound Enables Higher Density End Products UL Flammability Rating 94V-0 I = -2A High Continuous Current C Moisture Sensitivity: Level 1 per J-STD-020 I = -6A Peak Pulse Current CM Terminals: FinishMatte Tin Solderable per MIL-STD-202, Low Saturation Voltage V < -250mV -1A CE(sat) Method 208 Complementary NPN Type: DXTN07100BFG Weight: 0.03 grams (Approximate) Rated to +175CIdeal For High Temperature Environment Wettable Flank For Improved Optical Inspection Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) High Side Switch Halogen and Antimony Free. Green Device (Note 3) MOSFET or IGBT Gate Driving Qualified to AEC-Q101 Standards for High Reliability PowerDI3333-8 (SWP) (Type UX) Equivalent Circuit C C C C B E E E Pin1 Top View Bottom View Device Symbol Ordering Information (Notes 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DXTP07100BFG-7 AEC-Q101 2H8 7 12 2000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DXTP07100BFG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -120 V V CBO Collector-Emitter Voltage V -100 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -2 A C Peak Pulse Current I -6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.9 W Power Dissipation (Note 6) P 2.1 W D (Note 7) 3.1 W (Note 5) 140 C/W Thermal Resistance, Junction to Ambient (Note 6) 65 C/W R JA (Note 7) 44 C/W Thermal Resistance, Junction to Leads (Note 8) R 8.5 C/W JL Operating and Storage Temperature Range -55 to +175 C TJ, TSTG ESD Ratings (Note 9) JEDEC Class Characteristic Symbol Value Unit 3A Electrostatic DischargeHuman Body Model ESD HBM 4000 V C Electrostatic DischargeMachine Model ESD MM 400 V Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 October 2018 DXTP07100BFG www.diodes.com Diodes Incorporated Document Number DS41049 Rev.1 - 2