FZT757TA Diodes Incorporated

FZT757TA electronic component of Diodes Incorporated
FZT757TA Diodes Incorporated
FZT757TA Bipolar Transistors - BJT
FZT757TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT757TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT757TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT757TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 300 V 500 mA 30MHz 2 W Surface Mount SOT-223-3
Datasheet: FZT757TA Datasheet (PDF)
Price (USD)
1: USD 1.325 ea
Line Total: USD 1.32 
Availability : 3817
  
Ship by Thu. 20 Nov to Mon. 24 Nov
QtyUnit Price
1$ 1.325
10$ 0.8016
100$ 0.44
500$ 0.3971
1000$ 0.3707
2000$ 0.3289
5000$ 0.3168
10000$ 0.3102
25000$ 0.3036

Availability 3817
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.325
10$ 0.8016
100$ 0.44
500$ 0.3971
1000$ 0.3707
2000$ 0.3289
5000$ 0.3168
10000$ 0.3102
25000$ 0.3036


Availability 956
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.876
10$ 1.1704
41$ 0.4774
111$ 0.4508
10000$ 0.441


Availability 953
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.918
10$ 0.7338
30$ 0.6556
100$ 0.3767
500$ 0.3466
1000$ 0.3127

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT757TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT757TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT757 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BV > -300V Case: SOT223 CEO I = -0.5A Continuous Current C Case Material: Molded Plastic. Green Molding Compound I = -1A Peak Pulse Current CM UL Flammability Rating 94V-0 Complementary NPN Type: FZT657 Moisture Sensitivity: Level 1 per J-STD-020 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (Approximate) SOT223 C E B C C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FZT757TA AEC-Q101 FZT757 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT757 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -300 V V CBO Collector-Emitter Voltage -300 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -0.5 A I C Peak Pulse Current I -1 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 3.0 (Note 6) 2.0 Power Dissipation P W D (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 78.1 (Note 8) 104 Thermal Resistance, Junction to Leads (Note 9) R 12.9 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class 3A Electrostatic Discharge - Human Body Model ESD HBM 4,000 V C Electrostatic Discharge - Machine Model ESD MM 400 V Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 5, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 March 2015 FZT757 Diodes Incorporated www.diodes.com Document Number DS33165 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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