MMST3904Q-7-F Diodes Incorporated

MMST3904Q-7-F electronic component of Diodes Incorporated
MMST3904Q-7-F Diodes Incorporated
MMST3904Q-7-F Bipolar Transistors - BJT
MMST3904Q-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMST3904Q-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMST3904Q-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMST3904Q-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 60V NPN 40Vceo 200mA 200mW
Datasheet: MMST3904Q-7-F Datasheet (PDF)
Price (USD)
10: USD 0.103 ea
Line Total: USD 1.03 
Availability : 2696
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
10$ 0.103
100$ 0.0812
300$ 0.0527
3000$ 0.042
6000$ 0.0377
9000$ 0.0352

Availability 2696
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.103
100$ 0.0812
300$ 0.0527
3000$ 0.042
6000$ 0.0377
9000$ 0.0352


Availability 6927
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.35
10$ 0.21
100$ 0.126
500$ 0.0858
1000$ 0.0759
3000$ 0.0671


Availability 14550
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.071
6000$ 0.0664
9000$ 0.0525
15000$ 0.052
21000$ 0.0515
24000$ 0.0488
30000$ 0.0483
75000$ 0.0459
150000$ 0.0427
300000$ 0.0411

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMST3904Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMST3904Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMST3904Q 40V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BV > 40V Case: SOT323 CEO Case Material: Molded Plastic. Green Molding Compound. I = 200mA Collector Current C UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals: Finish - Matte Tin Plated Leads, Solderable per Complementary PNP Type: MMST3906Q e3 MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) The MMST3904Q is suitable for automotive applications requiring specific change control it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. MMST3904Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 60 V V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6 V VEBO Collector Current I 200 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 MMST3904Q October 2019 Diodes Incorporated www.diodes.com Document number: DSD42267 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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