X-On Electronics has gained recognition as a prominent supplier of MMSTA06Q-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMSTA06Q-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMSTA06Q-7-F Diodes Incorporated

MMSTA06Q-7-F electronic component of Diodes Incorporated
MMSTA06Q-7-F Diodes Incorporated
MMSTA06Q-7-F Bipolar Transistors - BJT
MMSTA06Q-7-F  Semiconductors

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See Product Specifications
Part No. MMSTA06Q-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor SOT323 T&R 3K
Datasheet: MMSTA06Q-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2401 ea
Line Total: USD 0.24 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
160
Ship by Mon. 30 Jun to Thu. 03 Jul
MOQ : 5
Multiples : 5
5 : USD 0.323
50 : USD 0.3166
150 : USD 0.2107
500 : USD 0.2078

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMSTA06Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMSTA06Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMSTA06Q 80V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT323 stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 BVCEO > 80V Weight: 0.006 grams (Approximate) I = 500mA Collector Current C Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Complementary PNP Type: MMSTA56Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT323 C B E Top View Device Symbol Pin-Out Top View Ordering Information (Notes 4 & 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel MMSTA06Q-7-F Automotive K1G 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMSTA06Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 80 V V CEO Emitter-Base Voltage 4 V VEBO Collector Current I 500 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 2 of 6 MMSTA06Q April 2017 Diodes Incorporated www.diodes.com Document number: DS39259 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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