ZVN0545G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Mechanical Data I Case: SOT223 D BV R DSS DS(ON) T = +25C Case Material: Molded Plastic, Green Molding Compound. A UL Flammability Classification Rating 94V-0 450V 50 V = 10V 140mA GS Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Features and Benefits e3 Solderable per MIL-STD-202, Method 208 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZVN0545GTA ZVN0545 7 8 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN0545G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 450 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current V = 10V T = +25C I 140 mA GS A D Pulsed Drain Current I mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation T = +25C P 2 W A D Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV 450 V V = 0V, I =1mA DSS GS D 10 A V = 450V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS 400 A V =405V, V =0V, T=+125C (Note 6) DS GS Gate-Source Leakage 20 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage 1 3 V V V = V , I = 1mA GS(TH) DS GS D Static Drain-Source On-State Resistance (Note 5) 50 R V = 10V, I = 100mA DS(ON) GS D On-State Drain Current (Note 5) 150 mA I V =25V, V =10V D(ON) DS GS Forward Transconductance (Notes 5 and 6) 100 mS g V =25V,I =100mA fs DS D DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 70 pF iss Output Capacitance C 10 pF V = 25V, V = 0V, f = 1MHz oss DS GS Reverse Transfer Capacitance C 4 pF rss 7 Turn-On Delay Time (Note 7) t ns D(ON) 7 Turn-On Rise Time (Note 7) t ns R V = 25V, I =100mA DD D 16 Turn-Off Delay Time (Note 7) t ns D(OFF) Turn-Off Fall Time (Note 7) 10 ns t F Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 4 ZVN0545G February 2015 Diodes Incorporated www.diodes.com Document Number DS33345 Rev. 4 - 2 ADVANCE INFORMATION NEW PRODUCT