Green ZVP2120G SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features and Benefits Product Summary Low On-Resistance I D V R (BR)DSS DS(on) Fast Switching Speed T = +25C A Complementary Type ZVN2120G -200V 25 V = -10V -200mA GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high Case: SOT223 efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Backlighting Terminals: Finish - Matte Tin Annealed over Copper Leadframe AC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Equivalent Circuit Pin Out - Top Top View View Ordering Information (Note 4) Product Case Quantity per reel ZVP2120GTA SOT223 1,000 Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVP2120G Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -200 V DS Continuous Drain Current I -200 mA D Pulsed Drain Current I -1.2 A DM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Power Dissipation 2 W P tot Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV -200 - - V I = -1mA, V = 0V DSS D GS Gate-Source Threshold Voltage V -1.5 - -3.5 V I = -1mA, V = V GS(th) D DS GS Gate-Body Leakage - - -20 nA IGSS VGS = 20V, VDS = 0V -10 A V = -200V, V = 0V DS GS Zero Gate Voltage Drain Current - - I DSS V = -160V, V = 0V, DS GS -100 A T = +125C (Note 6) On-State Drain Current (Note 5) I -300 - - mA V = -25V, V = -10V D(on) DS GS Static Drain-Source On-State Resistance (Note 5) R - - 25 V = -10V, I = -150mA DS(on) GS D Forward Transconductance (Notes 5 & 6) g 50 - - mS V = -25V, I = -150mA fS DS D Dynamic Characteristics (Note 6) Input Capacitance C - - 100 iss Common Source Output Capacitance C - - 25 pF V = -25V, V = 0V, f=1MHz oss DS GS Reverse Transfer Capacitance C - - 7 rss Turn-On Delay Time (Note 7) - - 7 t d(on) Rise Time (Note 7) - - 15 t r ns V = -25V, I = -150mA DD D Turn-Off Delay Time (Note 7) - - 12 t d(off) Fall Time (Note 7) - - 15 f f Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle2%. 6. Sample Test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 6 March 2015 ZVP2120G Diodes Incorporated www.diodes.com Document number: DS33399 Rev. 4 - 2 ADVANCE INFORMATION