ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID - Drain Current (Amps) ID - Drain Current (Amps) Gate Threshold Voltage VGS(TH) P-CHANNEL ENHANCEMENT ZVP3310A ZVP3310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS VGS= *R =20 DS(on) -20V VGS=-20V -16V -0.6 -16V -0.6 -14V -10V -12V -12V -9V D -10V G -9V -8V S -0.4 -0.4 -8V -7V E-Line -7V TO92 Compatible -6V -6V -0.2 -0.2 ABSOLUTE MAXIMUM RATINGS. -5V -5V -4.5V PARAMETER SYMBOL VALUE UNIT -4V -4V 0 -3.5V 0 Drain-Source Voltage V -100 V DS -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 Continuous Drain Current at T =25C I -140 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -1.2 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C -10 j stg -0.6 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). -8 amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -6 -0.4 VDS= Drain-Source Breakdown BV -100 V I =-1mA, V =0V -10V DSS D GS ID= Voltage -4 -0.3A -0.2 Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -0.15A -2 Voltage -0.075A Gate-Body Leakage I 20 nA V = 20V, V =0V 0 GSS GS DS 0 0-2 -4 -6 -8 -10 0 -2 -4 -6-8-10 Zero Gate Voltage Drain I -1 A V =-100V, V =0 DSS DS GS Current -50 V =-80V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -300 mA V =-25 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 20 V =-10V,I =-150mA DS(on) GS D Resistance (1) -8V -10V VGS=-4V -5V -6V -7V Forward Transconductance g 50 mS V =-25V,I =-150mA fs DS D 2.6 100 (1)(2) 2.4 VGS=-10V ID=-150mA Input Capacitance (2) C 50 pF 2.2 iss 2.0 50 Common Source Output C 15 pF V =-25V, V =0V, f=1MHz oss DS GS 1.8 Capacitance (2) 1.6 Reverse Transfer C 5pF rss 1.4 Capacitance (2) 1.2 VGS=VDS -20V ID=-1mA Turn-On Delay Time (2)(3) t 8ns 1.0 d(on) 0.8 Rise Time (2)(3) t 8ns r 0.6 V -25V, I =-150mA 10 DD D -40 -10 -100 -1000 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 8ns d(off) Fall Time (2)(3) t 8ns ID-Drain Current (mA) Tj-Junction Temperature (C) f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% Normalised RDS(on) and VGS(th) v Temperature On-resistance v drain current (2) Sample test. ( 3-433 3-432 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance () DS- Voltage (Volts) V Drain Source ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID - Drain Current (Amps) ID - Drain Current (Amps) Gate Threshold Voltage VGS(TH) P-CHANNEL ENHANCEMENT ZVP3310A ZVP3310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS VGS= *R =20 DS(on) -20V VGS=-20V -16V -0.6 -16V -0.6 -14V -10V -12V -12V -9V D -10V G -9V -8V S -0.4 -0.4 -8V -7V E-Line -7V TO92 Compatible -6V -6V -0.2 -0.2 ABSOLUTE MAXIMUM RATINGS. -5V -5V -4.5V PARAMETER SYMBOL VALUE UNIT -4V -4V 0 -3.5V 0 Drain-Source Voltage V -100 V DS -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 Continuous Drain Current at T =25C I -140 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -1.2 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C -10 j stg -0.6 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). -8 amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -6 -0.4 VDS= Drain-Source Breakdown BV -100 V I =-1mA, V =0V -10V DSS D GS ID= Voltage -4 -0.3A -0.2 Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -0.15A -2 Voltage -0.075A Gate-Body Leakage I 20 nA V = 20V, V =0V 0 GSS GS DS 0 0-2 -4 -6 -8 -10 0 -2 -4 -6-8-10 Zero Gate Voltage Drain I -1 A V =-100V, V =0 DSS DS GS Current -50 V =-80V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -300 mA V =-25 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 20 V =-10V,I =-150mA DS(on) GS D Resistance (1) -8V -10V VGS=-4V -5V -6V -7V Forward Transconductance g 50 mS V =-25V,I =-150mA fs DS D 2.6 100 (1)(2) 2.4 VGS=-10V ID=-150mA Input Capacitance (2) C 50 pF 2.2 iss 2.0 50 Common Source Output C 15 pF V =-25V, V =0V, f=1MHz oss DS GS 1.8 Capacitance (2) 1.6 Reverse Transfer C 5pF rss 1.4 Capacitance (2) 1.2 VGS=VDS -20V ID=-1mA Turn-On Delay Time (2)(3) t 8ns 1.0 d(on) 0.8 Rise Time (2)(3) t 8ns r 0.6 V -25V, I =-150mA 10 DD D -40 -10 -100 -1000 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 8ns d(off) Fall Time (2)(3) t 8ns ID-Drain Current (mA) Tj-Junction Temperature (C) f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% Normalised RDS(on) and VGS(th) v Temperature On-resistance v drain current (2) Sample test. ( 3-433 3-432 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance () DS- Voltage (Volts) V Drain Source