ZXMD63C03X Diodes Incorporated

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =30V R =0.135 I =2.3A (BR)DSS DS(ON) D P-CHANNEL: V =-30V R =0.185 I =-2.0A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance N-channel P-channel Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control Pin-out ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXMD63C03XTA 7 12 embossed 1,000 ZXMD63C03XTC 13 12 embossed 4,000 DEVICE MARKING Top view ZXM63C03 ISSUE 2 - SEPTEMBER 2007 1ZXMD63C03X ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V 30 -30 V DSS Gate- Source Voltage V 20 V GS Continuous Drain Current (V =4.5V T =25C)(b)(d) I 2.3 -2.0 A GS A D (V =4.5V T =70C)(b)(d) 1.8 -1.6 A GS A Pulsed Drain Current (c)(d) I 14 -9.6 A DM Continuous Source Current (Body Diode)(b)(d) I 1.5 -1.4 A S Pulsed Source Current (Body Diode)(c)(d) I 14 -9.6 A SM Power Dissipation at T =25C (a)(d) P 0.87 W A D Linear Derating Factor 6.9 mW/C Power Dissipation at T =25C (a)(e) P 1.04 W A D Linear Derating Factor 8.3 mW/C Power Dissipation at T =25C (b)(d) P 1.25 W A D Linear Derating Factor 10 mW/C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R 143 C/W JA Junction to Ambient (b)(d) R 100 C/W JA Junction to Ambient (a)(e) R 120 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 2 - SEPTEMBER 2007 2