Green ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Low On-Resistance I max D Fast Switching Speed Device BV R max DSS DS(ON) T = +25C A Low Threshold N-Channel 30V 0.12 V = 10V 3.1A GS Low Gate Drive P-Channel -30V 0.21 V = -10V -2.3A GS Single SM-8 Surface Mount Package Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation of trench MOSFETs from Zetex utilizes a unique Mechanical Data structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low Case: SM-8 (8 LEAD SOT223) voltage, power management applications. Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Single Phase DC Fan Motor Drive Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.117 grams (Approximate) SM-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC3A01T8TA 7 12mm 1,000 units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMHC3A01T8 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol N-channel P-channel Units -30 Drain-Source Voltage V 30 V DSS 20 Gate-Source Voltage V 20 V GSS -2.3 TA = +25C (Note 6 & 8) 3.1 Steady -1.8 2.5 A Continuous Drain Current, V = 10V (Note 8) T = +70C (Note 6 & 8) I GS A D State -2.0 2.7 T = +25C (Note 5 & 8) A -2.2 Continuous Source Current (body diode) (Note 6) I 2.3 A S -10.8 Pulsed Drain Current (Note 7) I 14.3 A DM -10.8 Pulsed Source Current (Note 7) I 14.5 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 8) 1.3 W T = +25C (Note 5) P A D Linear Derating Factor 10.4 mW/C 1.7 Total Power Dissipation (Note 8) W T = +25C (Note 6) P A D mW/C Linear Derating Factor 13.6 Steady State (Note 5) 96 C/W Thermal Resistance, Junction to Ambient (Note 8) R JA Steady State (Note 6) 73 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.. 6. For a device surface mounted on FR4 PCB measured at t seconds. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to transient thermal Impedance graph. 8. For device with one active die. 2 of 10 ZXMHC3A01T8 March 2015 Diodes Incorporated www.diodes.com Document number: DS33505 Rev. 6 - 2 NEW PRODUCT ADVANCE INFORMATION