X-On Electronics has gained recognition as a prominent supplier of ZXMHC6A07T8TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMHC6A07T8TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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ZXMHC6A07T8 Green COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P Channels in a SOIC Package I max D Device BV R max DSS DS(ON) Low On-Resistance T = +25C A Low Input Capacitance 0.3 V = 10V 1.8A GS N-Channel 60V Fast Switching Speed 0.45 V = 4.5V 1.4A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) 0.425 V = -10V -1.5A GS P-Channel -60V Halogen and Antimony Free. Green Device (Note 3) 0.63 V = -4.5V GS -1.2A Mechanical Data Description Case: SM-8 (8 LEAD SOT223) This new generation complementary MOSFET H-Bridge features low Case Material: Molded Plastic,Gree Molding Compound on-resistance achievable with low gate drive. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe DC Motor Control Solderable per MIL-STD-202, Method 208 DC-AC Inverters Weight: 0.117 grams (Approximate) SM-8 PIN1 G4 G3 S2 S3 D3 D4 G2 S1 S4 G1 D1 D2 Top View Pin Top View Internal Schematic Configuration Ordering Information (Note 4) Part Number Reel Size Tape Width Quantity Per Reel ZXMHC6A07T8TA 7 12mm 1,000 units ZXMHC6A07T8TC 13 12mm 4,000 units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMHC6A07T8 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol N-channel P-channel Units -60 Drain-Source Voltage V 60 V DSS 20 Gate-Source Voltage V 20 V GSS -1.5 TA = +25C (Note 6) 1.8 Steady -1.2 1.4 A Continuous Drain Current, V = 10V (Note 8) T = +70C (Note 6) I GS A D State -1.3 1.6 T = +25C (Note 5) A -2.1 Maximum Body Diode Forward Current (Note 6) I 2.3 A S -7.2 Pulsed Drain Current (Note 7) I 8.4 A DM -7.2 Pulsed Source Current (Note 7) I 8.4 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 8) 1.3 W T = +25C (Note 5) P A D Linear Derating Factor 10.4 mW/C 1.7 Total Power Dissipation (Note 8) W T = +25C (Note 6) P A D mW/C Linear Derating Factor 13.6 Steady State (Note 5) 94.5 C/W Thermal Resistance, Junction to Ambient (Note 8) R JA Steady State (Note 6) 73.3 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. 6. For a device surface mounted on FR4 PCB measured at t 10 seconds. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. For device with one active die. 2 of 10 ZXMHC6A07T8 April 2015 Diodes Incorporated www.diodes.com Document number: DS33508 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION
