ZXMN10A08G Green 100V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Mechanical Data Case: SOT223 I D V R (BR)DSS DS(on) Case Material: Molded Plastic, Green Molding Compound. T = 25C A UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 250m V = 10V 2.9A GS Terminals: Matte Tin Finish 100V 2.6A Weight: 0.112 grams (Approximate) 300m V = 6V GS Description Features and Benefits Low On-Resistance This new generation trench MOSFET from Zetex features a unique Fast Switching Speed structure, combining the benefits of low on-resistance and fast Low Threshold switching, making it ideal for high-efficiency, power management Lead-Free Finish RoHS Compliant (Notes 1 & 2) applications. Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC Converters Power Management Functions Disconnect Switches Motor Control SOT223 D G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A08GTA ZXMN10A08 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMN10A08G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 100 Drain-Source Voltage V V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current (VGS=10V TA = +25C) (Note 6) 2.9 (VGS=10V TA = +70C) (Note 6) I 2.3 A D (VGS=10V TA = +25C) (Note 5) 2.0 Pulsed Drain Current (Note 7) 11 A I DM Continuous Source Current (Body Diode) (Note 6) IS 5 A Pulsed Source Current (Body Diode) (Note 7) ISM 11 A Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation at TA = +25C (Note 5) 2.0 W P D Linear Derating Factor mW/C 16 Power Dissipation at TA = +25C (Note 6) 3.9 W P D Linear Derating Factor mW/C 31 Thermal Resistance, Junction to Ambient (Note 5) R 62.5 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 32 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV 100 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 0.5 A I V =100V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage 2 - - V V V = V , I =250A GS(TH) DS GS D - 0.25 V = 10V, I = 3.2A GS D Static Drain-Source On-Resistance (Note 8) - R DS(ON) - 0.30 V = 6V, I =2.6A GS D Forward Transconductance (Notes 8 & 10) g - 5 - S V = 15V, I =3.2A fs DS D TJ=25C, IS=3.2A, Diode Forward Voltage (Note 8) VSD 0.95 V - 0.87 VGS=0V DYNAMIC CHARACTERISTICS (Note 10) 405 Input Capacitance - - pF C iss V = 50V, V = 0V, DS GS 28.2 Output Capacitance - - pF C oss f = 1.0MHz 14.2 - - Reverse Transfer Capacitance C pF rss - 3.4 - Turn-On Delay Time (Note 9) t ns D(ON) - 2.2 - Turn-On Rise Time (Note 9) t ns R V = 30V, I = 1.2A, V = 10V, DD D GS - 8 - Turn-Off Delay Time (Note 9) t ns R =6 D(OFF) G - 3.2 - Turn-Off Fall Time (Note 9) t ns F Gate Charge (Note 9) Qg - 4.2 - nC V = 50V, V = 5V I = 1.2A DS GS D Total Gate Charge (Note 9) Qg nC - 7.7 - Gate-Source Charge (Note 9) Qgs nC - 1.8 - V = 50V, V = 10V I = 1.2A DS GS D Gate-Drain Charge (Note 9) Qgd - 2.1 - nC Reverse Recovery Time trr - 27 - ns TJ=25C, IS=1.2A, di/dt= 100A/s Reverse Recovery Charge Qrr - 32 - nC Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t10 secs. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Pulse width300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. 2 of 7 March 2015 ZXMN10A08G Diodes Incorporated www.diodes.com Document number: DS33567 Rev. 2 - 2