A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max I D V R Package (BR)DSS DS(ON) Fast Switching Speed T = +25C A Low Gate Drive 125m V = 10V 6.4A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note 3) (DPAK) 5.8A 150m V = 6V GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: TO252 (DPAK) (R ) and yet maintain superior switching performance, making it DS(on) ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (approximate) Power Management Functions Disconnect Switches Motor Control D TO252 D GS Top View Pin Out -Top View Equivalent Circuit Ordering Information (4 & 5) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A25KTC ZXMN10A25 13 16 2,500 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXMN10A25K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage 100 V V DSS Gate-Source voltage V V 20 GS (Note 7) 6.4 Continuous Drain current 5 A V = 10V T = +70C (Note 7) I GS A D (Note 6) 4.2 Pulsed Drain current (Note 8) 21 A I DM Continuous Source current (Body diode) (Note 7) I 10 A S Pulsed Source current (Body diode) (Note 8) I 21 A SM Thermal Characteristics Characteristic Symbol Value Unit 4.25 (Note 6) 34 W Power dissipation 9.85 (Note 7) P D Linear derating factor 78.7 mW/C 2.11 (Note 9) 16.8 (Note 6) 29.4 Thermal Resistance, Junction to Ambient (Note 7) 12.7 R JA C/W (Note 9) 59.1 Thermal Resistance, Junction to Lead (Note 10) 1.43 R JL Operating and storage temperature range -55 to 150 T , T C J STG Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. For a device surface mounted on FR4 PCB measured at t 10 sec. 8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 July 2012 ZXMN10A25K Diodes Incorporated www.diodes.com Document number: DS33569 Rev. 3 - 2