ZXMN2B14FHTA Diodes Incorporated

ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V R ( )I (A) (BR)DSS DS(on) D 0.055 V = 4.5V 4.3 GS 0.075 V = 2.5V 3.7 20 GS 0.100 V = 1.8V 3.2 GS Description This new generation of trench MOSFETs from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate drive capability SOT23 package S Applications DC-DC converters Power management functions S Disconnect switches Motor control D Ordering information G Device Reel size Tape width Quantity per reel (inches) (mm) Top view ZXMN2B14FHTA 7 8 3,000 Device marking 2B4 Issue 2 - March 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXMN2B14FH Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 V GS Continuous drain current V = 4.5V T =25C (b) I 4.3 A GS amb D V = 4.5V T =70C (b) 3.5 GS amb V = 4.5V T =25C (a) 3.5 GS amb Pulsed drain current (c) I 21 A DM Continuous source current (body diode) (b) I 2.4 A S Pulsed source current (body diode) (c) I 21 A SM Power dissipation at T =25C (a) P 1W amb D Linear derating factor 8 mW/C Power dissipation at T =25C (b) P 1.5 W amb D Linear derating factor 12 mW/C Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit Junction to ambient R 125 C/W JA Junction to ambient R 82 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 2 - March 2007 2 www.zetex.com Zetex Semiconductors plc 2007