ZXMN7A11KTC Diodes Incorporated

ZXMN7A11KTC electronic component of Diodes Incorporated
ZXMN7A11KTC Diodes Incorporated
ZXMN7A11KTC MOSFETs
ZXMN7A11KTC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXMN7A11KTC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN7A11KTC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ZXMN7A11KTC
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 70 V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Datasheet: ZXMN7A11KTC Datasheet (PDF)
Price (USD)
1: USD 1.45 ea
Line Total: USD 1.45 
Availability : 2658
  
Ship by Thu. 07 Aug to Mon. 11 Aug
QtyUnit Price
1$ 1.45
10$ 0.9384
100$ 0.6017
500$ 0.4862
1000$ 0.407
2500$ 0.3861

Availability 2470
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 454
Multiples : 1
QtyUnit Price
454$ 0.5729
1000$ 0.4875
2500$ 0.4796


Availability 2658
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.45
10$ 0.9384
100$ 0.6017
500$ 0.4862
1000$ 0.407
2500$ 0.3861


Availability 2470
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 627
Multiples : 1
QtyUnit Price
627$ 0.4152


Availability 287
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3824
10$ 1.138
30$ 0.7619
100$ 0.6032
500$ 0.5538
1000$ 0.5281


Availability 31525
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4091

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXMN7A11KTC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN7A11KTC and other electronic components in the MOSFETs category and beyond.

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ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V =70V : R =0.13 (BR)DSS DS(on) I =6.1A D Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast switching speed G Low threshold Low gate drive S DPAK package Applications DC-DC converters D Power management functions Disconnect switches Motor control Class D audio output stages D GS Ordering information Pinout - top view Device Reel size Tape width Quantity per reel (inches) (mm) ZXMN7A11KTC 13 16 2,500 Device marking ZXMN 7A11 Issue 2 - August 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMN7A11K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 70 V DSS Gate-source voltage V 20 V GS I 6.1 A Continuous drain current V =10V T =25C (b) D GS A 4.9 V =10V T =70C (b) GS A V =10V T =25C (a) 4.2 GS A Pulsed drain current (c) I 17 A DM Continuous source current (body diode) (b) I 8.7 A S Pulsed source current (body diode) (c) I 17 A SM Power dissipation at T =25C (a) P 4.06 W A D mW/C Linear derating factor 32.4 Power dissipation at T =25C (b) P 8.5 W A D mW/C Linear derating factor 68 Power dissipation at T =25C (d) P 2.11 W A D mW/C Linear derating factor 16.8 Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit R 30.8 C/W JA Junction to ambient R 14.7 C/W JA Junction to ambient R 59.1 C/W JA Junction to ambient NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - August 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
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