ZXMP4A57E6 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Fast Switching Speed D V(BR)DSS RDS(ON) max T = +25C A Low Gate Drive -3.7 A Low Input Capacitance 80m V = -10V GS -40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -2.8 A 150m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Capable (Note 4) This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high Mechanical Data efficiency power management applications. Case: SOT26 Case Material: Molded Plastic UL Flammability Classification Applications Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Power Management Functions Weight 0.018 grams (Approximate) Uninterrupted Power Supply SOT26 D G S Equivalent Circuit Top View Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Case Quantity per reel ZXMP4A57E6TA Standard SOT26 3,000 ZXMP4A57E6QTA Automotive SOT26 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP4A57E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GS (Note 7) -3.7 Continuous Drain Current V = 10V T = +70C (Note 7) I -2.9 A GS A D (Note 6) -2.9 Pulsed Drain Current V = 10V (Note 8) I -18 A GS DM Continuous Source Current (Body Diode) (Note 7) I -2.6 A S Pulsed Source Current (Body Diode) (Note 8) I -18 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 6) 8.8 Power Dissipation W P D Linear Derating Factor mW/C 1.7 (Note 7) 13.7 (Note 6) 113 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 73 Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 4, except the device is measured at t 5 seconds. 8. Same as Note 4, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 2 of 8 ZXMP4A57E6 February 2015 Diodes Incorporated www.diodes.com Document Number DS35238 Rev. 3 - 2 ADVANCE INFORMATION