ZXT10N50DE6TA Diodes Incorporated

ZXT10N50DE6TA electronic component of Diodes Incorporated
ZXT10N50DE6TA Diodes Incorporated
ZXT10N50DE6TA Bipolar Transistors - BJT
ZXT10N50DE6TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXT10N50DE6TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXT10N50DE6TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXT10N50DE6TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 3 A 165MHz 1.1 W Surface Mount SOT-23-6
Datasheet: ZXT10N50DE6TA Datasheet (PDF)
Price (USD)
1: USD 1.1875 ea
Line Total: USD 1.19 
Availability : 3288
  
Ship by Mon. 24 Nov to Wed. 26 Nov
QtyUnit Price
1$ 1.1875
10$ 0.7375
100$ 0.4235
500$ 0.3256
1000$ 0.2948
3000$ 0.2673

Availability 3288
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1875
10$ 0.7375
100$ 0.4235
500$ 0.3256
1000$ 0.2948
3000$ 0.2673


Availability 272
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6066
10$ 0.5368
30$ 0.506
100$ 0.3153
500$ 0.3039
1000$ 0.2964

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXT10N50DE6TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXT10N50DE6TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BV > 50V Case: SOT26 CEO I = 3A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = 6A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM R = 75m for a Low Equivalent On-Resistance Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) Low Saturation Voltage (200mV Max 1A) Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- h Characterized up to 6A STD-202, Method 208 FE Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.015 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT26 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXT10N50DE6TA AEC-Q101 619 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXT10N50DE6 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5 V EBO Base Current I 500 mA B Continuous Collector Current I 3 A C Peak Pulse Collector Current I 6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 5) 8.8 Power Dissipation W P D Linear Derating Factor mW/C 1.7 (Note 6) 13.6 (Note 5) 113 Thermal Resistance, Junction to Ambient R JA (Note 6) 73 C/W Thermal Resistance, Junction to Lead (Note 7) R 18.6 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is measured at t 5 sec. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXT10N50DE6 October 2015 Diodes Incorporated www.diodes.com Document Number: DS33623 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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