A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data NPN Transistor Case: W-DFN3020-8 Type B BV > 40V CEO Nominal package height: 0.8mm I = 3A Continuous Collector Current C Case material: molded plastic. Green molding compound. Low Saturation Voltage (500mV max 1A) UL Flammability Rating 94V-0 R = 195m for a low equivalent On-Resistance SAT Moisture Sensitivity: Level 1 per J-STD-020 PNP Transistor Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, BV > -40V CEO e4 Method 208 I = -3A Continuous Collector Current C Weight: 0.013 grams (approximate) Low Saturation Voltage (-500mV max -1A) R = 350m for a low equivalent On-Resistance SAT h characterized up to 2A for high current gain hold up FE Applications Low profile 0.8mm high package for thin applications DC DC Converters R efficient, 40% lower than SOT26 JA 2 Charging circuits 6mm footprint, 50% smaller than TSOP6 and SOT26 Power switches Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) LED Backlighting circuits Qualified to AEC-Q101 Standards for High Reliability Motor control PPAP capable (Note 4) Portable applications C1 C2 W-DFN3020-8 C2 C2 C1 C1 Type B B1 B2 C2 C1 E2 B2 E1 B1 Pin 1 E1 E2 Top View Bottom View NPN Transistor PNP Transistor Bottom View Pin Out Equivalent Circuit Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC4591AMCTA AEC-Q101 91A 7 8 3,000 ZXTC4591AMCQTA Automotive 91A 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTC4591AMC Maximum Ratings ( T = +25C, unless otherwise specified.) A Parameter Symbol NPN PNP Unit Collector-Base Voltage 40 -40 V CBO Collector-Emitter Voltage 40 -40 V V CEO Emitter-Base Voltage 7 -7 V EBO Peak Pulse Current 3 -3 I CM A (Notes 6 & 9) 2 -1.5 Continuous Collector Current I C (Notes 7 & 9) 2.5 -2 Base Current 300 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol NPN PNP Unit 1.5 (Notes 6 & 9) 12 2.45 (Notes 7 & 9) Power Dissipation 19.6 W P D Linear Derating Factor mW/C 1.13 (Notes 8 & 9) 8 1.7 (Notes 8 & 10) 13.6 (Notes 6 & 9) 83.3 (Notes 7 & 9) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 8 & 9) 111 C/W (Notes 8 & 10) 73.5 Thermal Resistance, Junction to Lead (Notes 9 & 11) R 17.1 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 2 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pad). ZXTC4591AMC 2 of 9 October 2012 Document number: DS31925 Rev. 4 - 2 Diodes Incorporated www.diodes.com