A Product Line of Diodes Incorporated ZXTD619MC DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BV > 50V Case: DFN3020B-8 CEO I = 4A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Low Saturation Voltage (100mV max 1A) Terminals: Pre-Plated NiPdAu leadframe. R = 68m for Low Equivalent On Resistance SAT UL Flammability Rating 94V-0 h specified up to 6A for high current gain holds up FE Nominal package height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Weight: 0.013 grams (approximate) R efficient, 40% lower than SOT26 JA 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Applications Halogen and Antimony Free. Green Device (Note 2) DC DC Converters Qualified to AEC-Q101 Standards for High Reliability MOSFET gate drivers Charging circuits Motor Control Power switches Portable applications DFN3020B-8 C2 C1 C2 C2 C1 C1 C2 C1 B2 B1 E2 B2 E1 B1 Pin 1 E2 E1 Top View NPN Transistor NPN Transistor Bottom View Bottom View Pin Out Equivalent Circuit Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD619MCTA DCC 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXTD619MC Maximum Ratings T = 25C unless otherwise specified A Parameter Symbol Limit Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 7 V EBO Peak Pulse Current I 6 A CM Continuous Collector Current (Note 4 and 7) 4 A I C Base Current 1 A I B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Notes 4 & 7) 12 2.45 (Notes 5 & 7) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 6 & 7) 8 1.7 (Notes 6 & 8) 13.6 (Notes 4 & 7) 83.3 (Notes 5 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 6 & 7) 111 C/W (Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) R 17.1 JL Operating and Storage Temperature Range -55 to +150 C T , T J STG 2 Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec. 2 6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 2 of 7 January 2011 ZXTD619MC Diodes Incorporated www.diodes.com Document Number DS31932 Rev. 3 - 2