ZXTN2010ASTZ Diodes Incorporated

ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BV = 60V : R = 34m I = 4.5A CEO SAT C DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES Extemely low equivalent on-resistance R = 34m at 5A SAT 4.5 amps continuous current Up to 15 amps peak current Very low saturation voltages APPLICATIONS Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC modules Backlight inverters ORDERING INFORMATION DEVICE QUANTITY ZXTN2010ASTOA 2000 units / reel ZXTN2010ASTZ 2000 units / carton DEVICE MARKING ZXT N20 PINOUT 10 ISSUE 2 - MAY 2006 1 SEMICONDUCTORS E-LINEZXTN2010A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV 150 V CBO Collector-emitter voltage BV 60 V CEO Emitter-base voltage BV 7V EBO (a) Continuous collector current I 4.5 A C Peak pulse current I 15 A CM (a) Practical power dissipation P 1.0 W D Linear derating factor 8 mW/C (b) Power dissipation at T =25C P 0.71 W A D Linear derating factor 5.7 mW/C Operating and storage temperature range T,T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to ambient R 125 C/W JA (b) Junction to ambient R 175 C/W JA NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b For a device mounted in a socket in still air conditions. Collector lead length 10mm. ISSUE 2 - MAY 2006 2 SEMICONDUCTORS