A Product Line of Diodes Incorporated ZXTN26020DMF HIGH GAIN, LOW V NPN BIPOLAR TRANSISTOR CE(SAT) Features Mechanical Data High Gain Low Vcesat NPN transistor Case: DFN1411-3 Very Low Rcesat Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High ICM capability Moisture Sensitivity: Level 1 per J-STD-020 1.5A Continuous Current Rating Terminals: Finish NiPdAu over Copper lead frame. Solderable Ultra-Small Surface mount Package per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.003 grams (approximate) Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Green Device (Note 2) ESD rating: 400V-MM, 8KV-HBM Applications MOSFET and IGBT gate driving DC-DC conversion Interface between low voltage IC and Load LED driving Top view Bottom view Device Symbol Pin-out Top view Ordering Information Product Status Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN26020DMFTA Active Z1 7 8 3000 Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXTN26020DMF Maximum Ratings Characteristic Symbol Value Unit Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current (Note 4) I 1.5 A C Peak Pulse Current 4 A I CM Base Current 0.5 A I B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) P 1 W D Power Dissipation (Note 4) P 380 mW D Thermal Resistance, Junction to Ambient (Note 3) T = 25C 125 C/W R A JA Thermal Resistance, Junction to Ambient (Note 3) T = 25C 330 C/W A R JA Operating and Storage Temperature Range -55 to +150 T T C J, STG Notes: 3. Device mounted on FR-4 PCB with 1inch square pads. 4. Device mounted on FR-4 PCB with minimum recommended pad layout 1.2 1,000 Single Pulse R (t) = r(t) * R 1.0 JA JA R = 328C/W Note 3 JA 100 T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 0.8 0.6 10 0.4 Note 4 1 0.2 0 0.1 0 20 40 60 80 100 120 140 160 0.00001 0.001 0.1 10 1,000 T , AMBIENT TEMPERATURE (C) t , PULSE DURATION TIME (s) 1 A Fig. 2 Single Pulse Maximum Power Dissipation Fig. 1 Power Dissipation vs. Ambient Temperature 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R (t) = r(t) * R JA JA D = 0.02 R = 328C/W JA 0.01 D = 0.01 P(pk) t 1 D = 0.005 t 2 T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 3 Transient Thermal Response ZXTN26020DMF 2 of 6 September 2009 Documnt Number: DS31953 Rev. 2 - 1 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (W) D r(t), TRANSIENT THERMAL RESISTANCE P(pk), PEAK TRANSIENT POWER (W)