ZXTP2039FTA Diodes Incorporated

ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V > -80V (BR)CEV V > -60V (BR)CEO I = -1A c(cont) V < -600mV -1A ce(sat) Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 package Applications Power MOSFET gate driving Low loss power switching Ordering information Pin out - top view Device Reel size Tape width Quantity per reel ZXTP2039FTA 7 8mm 3,000 ZXTP2039FTC 13 8mm 10,000 Device marking P39 Issue 3 - August 2005 1 www.zetex.com Zetex Semiconductors plc 2005ZXTP2039F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 V CEV Collector-emitter voltage V -60 V CEO Emitter-base voltage V -5.0 V EBO Peak pulse current I -2 A CM * I -1 A Continuous collector current C Peak base current I -1 A BM * P 350 mW Power dissipation T =25C D A Operating and storage temperature T :T -55 to +150 C j stg NOTES: * For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 3 - August 2005 2 www.zetex.com Zetex Semiconductors plc 2005