ZXTP2039FTA Diodes Incorporated

Name: ZXTP2039FTA
Brand: Diodes Incorporated
SKU: ZXTP2039FTA_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

ZXTP2039FTA electronic component of Diodes Incorporated

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTP2039FTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP2039FTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	ZXTP2039FTA
Manufacturer:	Diodes Incorporated
Category:	Bipolar Transistors - BJT
Description:	Diodes Incorporated Bipolar Transistors - BJT PNP 60V 1A 3-PIN
Datasheet:	ZXTP2039FTA Datasheet (PDF)

Price (USD)

6000: USD 0.0781 ea
Line Total: USD 468.6

Availability - 357930

Ship by Wed. 30 Jul to Tue. 05 Aug

Qty Unit Price
6000 $ 0.0781

ZXTP2039FTA More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 29261

Ship by Mon. 28 Jul to Wed. 30 Jul

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.55
10 $ 0.3338
100 $ 0.2028
500 $ 0.1386
1000 $ 0.1243
3000 $ 0.1023
6000 $ 0.0935
9000 $ 0.0924

Availability 357930

Ship by Wed. 30 Jul to Tue. 05 Aug

MOQ : 6000
Multiples : 3000

Qty Unit Price
6000 $ 0.0781

Availability 2910

Ship by Wed. 30 Jul to Tue. 05 Aug

MOQ : 3000
Multiples : 3000

Qty Unit Price
3000 $ 0.1167
6000 $ 0.1034
9000 $ 0.0996
15000 $ 0.0955
21000 $ 0.093

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 SOT - 23

Transistor Polarity

Pnp Pnp

Configuration

Single Single

Maximum DC Collector Current

1 A 1 A

Collector- Emitter Voltage VCEO Max

60 V 60 V

Collector- Base Voltage VCBO

80 V 80 V

Emitter- Base Voltage VEBO

5 V 5 V

Pd - Power Dissipation

350 mW 350 mW

Gain Bandwidth Product fT

150 Mhz 150 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Zxtp20 Zxtp20

Packaging

Reel Reel

Dc Current Gain Hfe Max

100 @ 1 mA @ 5 v 100 @ 1 mA @ 5 v

Brand

Diodes Incorporated Diodes Incorporated

Dc Collector/Base Gain Hfe Min

100 At 1 Ma At 5 V, 100 At 500 Ma At 5 V, 80 At 1 A At 5 V, 15 At 2 A At 5 V 100 At 1 Ma At 5 V, 100 At 500 Ma At 5 V, 80 At 1 A At 5 V, 15 At 2 A At 5 V

Maximum Power Dissipation

350 mW 350 mW

Factory Pack Quantity :

3000 3000

Height

1 mm 1 mm

Length

2.9 mm 2.9 mm

Cnhts

8541210000 8541210000

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

ZXTP2039FTA Alternative Parts

We are delighted to provide the ZXTP2039FTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP2039FTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V > -80V (BR)CEV V > -60V (BR)CEO I = -1A c(cont) V < -600mV -1A ce(sat) Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 package Applications Power MOSFET gate driving Low loss power switching Ordering information Pin out - top view Device Reel size Tape width Quantity per reel ZXTP2039FTA 7 8mm 3,000 ZXTP2039FTC 13 8mm 10,000 Device marking P39 Issue 3 - August 2005 1 www.zetex.com Zetex Semiconductors plc 2005ZXTP2039F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 V CEV Collector-emitter voltage V -60 V CEO Emitter-base voltage V -5.0 V EBO Peak pulse current I -2 A CM * I -1 A Continuous collector current C Peak base current I -1 A BM * P 350 mW Power dissipation T =25C D A Operating and storage temperature T :T -55 to +150 C j stg NOTES: * For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 3 - August 2005 2 www.zetex.com Zetex Semiconductors plc 2005

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Qty	Unit Price
1	$ 0.55
10	$ 0.3338
100	$ 0.2028
500	$ 0.1386
1000	$ 0.1243
3000	$ 0.1023
6000	$ 0.0935
9000	$ 0.0924

Qty	Unit Price
3000	$ 0.1167
6000	$ 0.1034
9000	$ 0.0996
15000	$ 0.0955
21000	$ 0.093

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