ZXTP25020DFLTA Diodes Incorporated

ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BV > -20V CEO BV > -4V ECO I = 1.5A C(cont) V < 85 mV 1A CE(sat) R = 54m CE(sat) P = 350mW D Complementary part number ZXTN25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak current E Low saturation voltage Applications E DC-DC converters MOSFET and IGBT gate driving C B Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020DFLTA 7 8 3000 Device marking 1F2 Issue 1 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP25020DFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -25 V CBO Collector-emitter voltage (forward blocking) V -20 V CEO Emitter-collector voltage (reverse blocking) V -4 V ECO Emitter-base voltage V -7 V EBO Continuous collector current I -1.5 A C Base current I -500 mA B Peak pulse current I -6 A CM (a) P 350 mW Power dissipation at T =25C D amb Linear derating factor 2.8 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 357 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007