We are the renowned ZXTP25140BFHTA Bipolar Transistors - BJT seller and distributer in the USA, India, Europe, Australia, and beyond. ZXTP25140BFHTA Bipolar Transistors - BJT is a manufacturer from Diodes Incorporated. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

ZXTP25140BFHTA

ZXTP25140BFHTA electronic component of Diodes Incorporated
Part No.ZXTP25140BFHTA
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 140 V 1 A 75MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP25140BFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5635 ea
Line Total: USD 0.56

5289 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40740 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2437

We proudly offer the ZXTP25140BFHTA Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the ZXTP25140BFHTA Bipolar Transistors - BJT.
     
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RoHS - XON
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Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV > -180V BV > -140V (BR)CEX (BR)CEO BV > -7V (BR)ECO I = -1A C(cont) R = 180 m typical ce(sat) V < -260mV 1A ce(sat) P = 1.25W D Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E High power dissipation SOT23 package 180V forward blocking voltage Low saturation voltage Applications DC-DC converters High side switching Ordering information Pinout - top view Device Reel size Tape width Quantity per (inches) reel ZXTP25140BFHTA 7 8mm 3,000 Device marking 026 Issue 1 - March 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTP25140BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -180 V CBO Collector-emitter voltage (forward blocking) V -180 V CEX Collector-emitter voltage V -140 V CEO Emitter-collector voltage (reverse blocking) V -7 V ECO Emitter-base voltage V -7 V EBO (a) I -1 A Continuous collector current C Peak pulse current I -3 A CM (a) P 0.73 W Power dissipation at T =25C D A 5.84 mW/C Linear derating factor (b) P 1.05 W Power dissipation at T =25C D A 8.4 mW/C Linear derating factor (c) P 1.25 W Power dissipation at T =25C D A 9.6 mW/C Linear derating factor (d) P 1.81 W Power dissipation at T =25C D A 14.5 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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