ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BV > -150V CEO BV > -5V EBO I = -600mA C(cont) P = 1.2W D Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features B 150V rating SOT89 package E Applications High voltage amplification E Ordering information C C Device Reel size Tape width Quantity (inches) (mm) per reel B ZXTP5401ZTA 7 12 1000 Pinout - top view Device marking P01 Issue 1 - August 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP5401Z Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -160 V CBO Collector-emitter voltage V -150 V CEO Emitter-base voltage V -5 V EBO (a) I -600 mA Continuous collector current C Pulsed collector current I -2 A CM (a) P 1.2 W Power dissipation at T = 25C D A Linear derating factor 9.6 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 2 www.zetex.com Zetex Semiconductors plc 2007