ZXTP56060FDBQ 60V DUAL PNP LOW V TRANSISTOR CE(sat) Description Mechanical Data This bipolar junction transistors (BJT) is designed to meet the Case: U-DFN2020-6 (SWP) (Type A) with Sidewall Plating stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: FinishMatte Tin, Solderable per MIL-STD-202, BV > -60V CEO Method 208 I = -2A High Continuous Collector Current C Weight: 0.0065 grams (Approximate) R = 250m for a Low Equivalent On-Resistance CE(sat) Sidewall Tin Plating for Wettable Flanks in AOI Application P Up to 2.47W for Power Demanding Applications D Low Profile 0.6mm High Package for Thin Applications Matrix LED Lighting Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Power Management Halogen and Antimony Free. Green Device (Note 3) The ZXTP56060FDBQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. ZXTP56060FDBQ Absolute Maximum Ratings Q1 & Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -60 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -2 A C Peak Pulse Collector Current -3 A I CM Base Current -300 mA I B Peak Base Current -1 A I BM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit (Notes 5 & 7) 405 (Notes 5 & 8) 510 Power Dissipation mW P D (Notes 6 & 7) 1650 (Notes 6 & 8) 2470 (Notes 5 & 7) 308 (Notes 5 & 8) 245 Thermal Resistance, Junction to Ambient C/W R JA (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) 18 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 2 6. Same as Note 5, except the device is mounted with the collector pad on 28mm 28mm (8cm ) 2oz copper. 7. For a dual device with one active die. 8. For dual device with two active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 17 February 2020 ZXTP56060FDBQ Diodes Incorporated www.diodes.com Datasheet number: DS39605 Rev. 2 - 2