We are the renowned ZXTP717MATA Bipolar Transistors - BJT suppliers in the USA, India, Europe, Australia, and beyond. ZXTP717MATA Bipolar Transistors - BJT is a manufacturer from Diodes Incorporated. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

ZXTP717MATA

ZXTP717MATA electronic component of Diodes Incorporated
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See Product Specifications
Part No. ZXTP717MATA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 4.5 A 100MHz 3 W Surface Mount U-DFN2020-3
Datasheet: ZXTP717MATA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1612 ea
Line Total: USD 483.6

2910 - Global Stock
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1612
6000 : USD 0.1612
9000 : USD 0.1612
12000 : USD 0.1612
15000 : USD 0.1612

101 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4673
10 : USD 0.3807
30 : USD 0.3425
100 : USD 0.2962
500 : USD 0.2761
1000 : USD 0.2639

3134 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.598
10 : USD 0.498
100 : USD 0.3622
500 : USD 0.2829
1000 : USD 0.23
3000 : USD 0.1978

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package Case
Brand
Continuous Collector Current
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the ZXTP717MATA Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the ZXTP717MATA Bipolar Transistors - BJT.

A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data Case: DFN2020B-3 BV > -12V CEO I = -4A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Low Saturation Voltage (-140mV max -1A) Terminals: Pre-Plated NiPdAu leadframe. R = 60 m for a low equivalent On-Resistance SAT Nominal Package Height: 0.6mm h specified up to -10A for a high current gain hold up UL Flammability Rating 94V-0 FE Low profile 0.6mm high package for thin applications Moisture Sensitivity: Level 1 per J-STD-020 R efficient, 60% lower than SOT23 JA Weight: 0.01 grams (approximate) 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free.Gree Device (Note 2) Applications Qualified to AEC-Q101 Standards for High Reliability MOSFET Gate Driving DC-DC Converters Charging Circuits Power switches Motor Control DFN2020B-3 C B E Top View Bottom View Device Symbol Bottom View Pin-Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTP717MATA S1 7 8 3000 Notes: 1. No purposefully added lead. 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated ZXTP717MA Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -20 CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -7 EBO Peak Pulse Current I -12 CM (Note 4) -4 Continuous Collector Current I A C (Note 5) -4.5 Base Current I -1 B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Note 4) Power Dissipation 12 W P D Linear Derating Factor 2.45 mW/C (Note 5) 19.6 (Note 4) 83 Thermal Resistance, Junction to Ambient R JA (Note 5) 51 C/W Thermal Resistance, Junction to Lead (Note 6) R 16.8 JL Operating and Storage Temperature Range -55 to +150 C T T J, STG 2 Notes: 4. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 5. Same as note (4), except the device is measured at t 5 sec. 6. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead). ZXTP717MA 2 of 7 January 2011 Document Number DS31881 Rev. 5 - 2 Diodes Incorporated www.diodes.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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