Product Information

ZXTS1000E6TA

ZXTS1000E6TA electronic component of Diodes Incorporated

Datasheet
Bipolar Transistors - BJT 20V PNP & Schottky
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.35 ea
Line Total: USD 0.35

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

ZXTS1000E6TA
Diodes Incorporated

1 : USD 0.35
10 : USD 0.2856
100 : USD 0.2434
500 : USD 0.2279

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

ZXTS1000E6TA
Diodes Incorporated

1 : USD 0.35
10 : USD 0.2856
100 : USD 0.2434
500 : USD 0.2279

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

ZXTS1000E6TA
Diodes Incorporated

3000 : USD 0.2371

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: V =-12V, I = -1.25A CEO C Schottky Diode: V =40V I = 0.5A R C DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES Low Saturation Transistor High Gain - 300 minimum Low V , fast switching Schottky F APPLICATIONS Mobile telecomms, PCMCIA & SCSI DC-DC Conversion ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXTS1000E6TA 7 8mm embossed 3000 units 8mm embossed ZXTS1000E6TC 13 10000 units Top View DEVICE MARKING 1000 ISSUE 1 - NOVEMBER 2000 1ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V -12 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1.25 A C Schottky Diode Continuous Reverse Voltage V 40 V R Forward Current I 0.5 A F Non Repetitive Forward Current t100 s I 6.75 A FSM 3 A t 10ms Package Power Dissipation at T =25C amb single die on P 0.725 W D both die on 0.885 W Storage Temperature Range T -55 to +150 C stg Junction Temperature T 125 C j THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) single die on R 138 C/W JA both die on R 113 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ISSUE 1 - NOVEMBER 2000 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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