Product Information

MMBT2907A 2F

MMBT2907A 2F electronic component of Hong Kong Chuangji

Datasheet
10nA 60V 350mW 600mA 100@150mA,10V 200MHz 1.6V@500mA,50mA +150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Manufacturer: Hong Kong Chuangji
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0215 ea
Line Total: USD 1.08

1794 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
4898 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 50
Multiples : 50

Stock Image

MMBT2907A 2F
Hong Kong Chuangji

50 : USD 0.019
500 : USD 0.0154
3000 : USD 0.0123
6000 : USD 0.0111
24000 : USD 0.0101
51000 : USD 0.0094

Read More Specifications

     
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Additional Infomation About Product

MMBT2907A 2F with 10nA 60V 350mW 600mA 100@150mA,10V 200MHz 1.6V@500mA,50mA +150?@(Tj) SOT-23 ROHS manufactured by Hong Kong Chuangji is a Bipolar Transistor - BJT; a three-terminal semiconductor device used to amplify and switch signals. It features a 10nA collector-base breakdown voltage of 60V, an emitter-base breakdown voltage of 10V, a maximum collector current of 600mA, and a maximum collector power dissipation of 350mW. This transistor also has a peak collector current of 100A at an emitter voltage of 150mA, a gain bandwidth product of 200MHz at a collector-emitter voltage of 1.6V and a maximum collector current of 500mA, and a maximum junction temperature of +150°C. It is ROHS compliant and manufactured by Hong Kong Chuangji.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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