Product Information

S8550 2TY

S8550 2TY electronic component of Hong Kong Chuangji

Datasheet
SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: Hong Kong Chuangji
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0117 ea
Line Total: USD 0.58

47724 - Global Stock
Ships to you between
Mon. 20 May to Thu. 23 May
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
47724 - WHS 1


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 50
Multiples : 50

Stock Image

S8550 2TY
Hong Kong Chuangji

50 : USD 0.0117
500 : USD 0.0094
3000 : USD 0.0077
6000 : USD 0.0069
24000 : USD 0.0062
51000 : USD 0.0058

65319 - WHS 2


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 20
Multiples : 20

Stock Image

S8550 2TY
Hong Kong Chuangji

20 : USD 0.017
200 : USD 0.0138
600 : USD 0.0119
3000 : USD 0.0094
9000 : USD 0.0085
21000 : USD 0.0081

2667 - WHS 3


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 50
Multiples : 50

Stock Image

S8550 2TY
Hong Kong Chuangji

50 : USD 0.0135
500 : USD 0.0108
3000 : USD 0.0093
6000 : USD 0.0084
24000 : USD 0.0077
51000 : USD 0.0072

     
Manufacturer
Product Category
Package
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
LoadingGif

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Electronics Co., LtdThe S8550 2TY is a SOT-23 Bipolar Transistor (BJT) that is manufactured by Hong Kong Chuangji Electronics Co., Ltd. and conforms to the Restriction of Hazardous Substances (RoHS) standard. Specifically, the 2TY model is engineered to utilize a current gain of 40 minimum. It is characterized by a high frequency capability of 800MHz and a secondary breakdown voltage of 45V. This transistor can be used in many types of applications, including amplification, switching, switching regulator control, and time delay control. With a maximum collector cutoff current ICEO of 0.1mA and a maximum emitter cutoff voltage VEB of 6V, the transistor provides high performance and reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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